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VS-10MQ100NTRPBF

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Vishay Intertech Schottky Barrier Diodes (SBD), SMA(DO-214AC). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

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VS-10MQ100NTRPBF

Vishay Intertech · Schottky Barrier Diodes (SBD) · SMA(DO-214AC)

VS-10MQ100NTRPBF from Vishay Intertech, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SMA(DO-214AC)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum DC reverse voltage VR 100 V 1
Maximum average forward current IF(AV) 1.5 A 50 % duty cycle at TL = 126 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area) 1
Maximum average forward current IF(AV) 1 A 50 % duty cycle at TL = 135 °C, rectangular waveform; on PC board 9 mm2 island (0.013 mm thick copper pad area) 1
Maximum peak one cycle non-repetitive surge current IFSM 120 A TJ = 25 °C; 5 μs sine or 3 μs rect. pulse; following any rated load condition and with rated VRRM applied 1
Maximum peak one cycle non-repetitive surge current IFSM 30 A TJ = 25 °C; 10 ms sine or 6 ms rect. pulse; following any rated load condition and with rated VRRM applied 1
Non-repetitive avalanche energy EAS 1 mJ TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1
Maximum forward voltage drop VFM 0.78 V See fig. 1; IF = 1 A; TJ = 25 °C 2
Maximum forward voltage drop VFM 0.85 V See fig. 1; IF = 1.5 A; TJ = 25 °C 2
Maximum forward voltage drop VFM 0.63 V See fig. 1; IF = 1 A; TJ = 125 °C 2
Maximum forward voltage drop VFM 0.68 V See fig. 1; IF = 1.5 A; TJ = 125 °C 2
Maximum reverse leakage current IRM 0.1 mA See fig. 2; TJ = 25 °C; VR = Rated VR 2
Maximum reverse leakage current IRM 1 mA See fig. 2; TJ = 125 °C 2
Maximum junction and storage temperature range TJ, TStg -55 150 °C 2
Maximum voltage rate of change dV/dt 10000 V/μs Rated VR 2
Maximum thermal resistance, junction to ambient RthJA 80 °C/W DC operation 2
Repetitive avalanche current IAR 0.5 A Current decaying linearly to zero in 1 μs; frequency limited by TJ maximum; VA = 1.5 x VR 1
Typical junction capacitance CT 38 pF VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 2
Typical series inductance LS 2 nH Measured lead to lead 5 mm from package body 2
Threshold voltage VF(TO) 0.52 V TJ = TJ maximum 2
Forward slope resistance rt 78.4 mΩ 2

CAD (KiCad official)

  • Symbol: VS-10MQ100NTRPBF
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
  • 3D model files: vs-10mq100ntrpbf-etched.step / vs-10mq100ntrpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-10mq100ntrpbf.step / vs-10mq100ntrpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (6 pp, sha256 6f732c18e3daaeae, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF