component
VS-10MQ100HM3
Public Made by Adomby adom
Vishay Intertech Schottky Barrier Diodes (SBD), DO-214AC(SMA). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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VS-10MQ100HM3
Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AC(SMA)
VS-10MQ100HM3 from Vishay Intertech, in a DO-214AC(SMA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the cathode band on the SMA (DO-214AC) package; the diode is rated for 100 V maximum DC reverse voltage (VR) and 1 A average forward current. |
| 2 | A | passive | Anode of the single Schottky rectifier in the SMA (DO-214AC) package, with a maximum forward voltage drop of 0.78 V at 1 A and TJ = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AC(SMA) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum forward voltage drop | VFM | 0.78 | V | 1 A, TJ = 25 °C; pulse width 300 μs, duty cycle 2 % | 2 | ||
| Maximum forward voltage drop | VFM | 0.85 | V | 1.5 A, TJ = 25 °C; pulse width 300 μs, duty cycle 2 % | 2 | ||
| Maximum forward voltage drop | VFM | 0.63 | V | 1 A, TJ = 125 °C; pulse width 300 μs, duty cycle 2 % | 2 | ||
| Maximum forward voltage drop | VFM | 0.68 | V | 1.5 A, TJ = 125 °C; pulse width 300 μs, duty cycle 2 % | 2 | ||
| Maximum reverse leakage current | IRM | 0.1 | mA | TJ = 25 °C, VR = Rated VR | 2 | ||
| Maximum reverse leakage current | IRM | 1 | mA | TJ = 125 °C, VR = Rated VR | 2 | ||
| Threshold voltage | VF(TO) | 0.52 | V | TJ = TJ maximum | 2 | ||
| Forward slope resistance | rt | 78.4 | mΩ | TJ = TJ maximum | 2 | ||
| Maximum voltage rate of change | dV/dt | 10000 | V/μs | Rated VR | 2 | ||
| Typical junction capacitance | CT | 38 | pF | VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz | 2 | ||
| Typical series inductance | LS | 2 | nH | Measured lead to lead 5 mm from package body | 2 | ||
| Maximum DC reverse voltage | VR | 100 | V | 1 | |||
| Maximum working peak reverse voltage | VRWM | 100 | V | 1 | |||
| Maximum average forward current | IF(AV) | 1.5 | A | 50 % duty cycle at TL = 126 °C, rectangular waveform, on PC board 9 mm2 island | 1 | ||
| Maximum average forward current | IF(AV) | 1 | A | 50 % duty cycle at TL = 135 °C, rectangular waveform, on PC board 9 mm2 island | 1 | ||
| Maximum peak one cycle non-repetitive surge current | IFSM | 120 | A | 5 μs sine or 3 μs rect. pulse, TJ = 25 °C, following any rated load condition and with rated VRRM applied | 1 | ||
| Maximum peak one cycle non-repetitive surge current | IFSM | 30 | A | 10 ms sine or 6 ms rect. pulse, TJ = 25 °C, following any rated load condition and with rated VRRM applied | 1 | ||
| Non-repetitive avalanche energy | EAS | 1 | mJ | TJ = 25 °C, IAS = 0.5 A, L = 8 mH | 1 | ||
| Repetitive avalanche current | IAR | 0.5 | A | Current decaying linearly to zero in 1 μs, frequency limited by TJ maximum, VA = 1.5 x VR typical | 1 | ||
| Junction and storage temperature range | TJ, TStg | -55 | 150 | °C | 2 | ||
| Maximum thermal resistance, junction to ambient | RthJA | 80 | °C/W | DC operation | 2 |
CAD (KiCad official)
- Symbol:
VS-10MQ100HM3 - Footprint:
Diode_SMD:D_SMA - 3D model: DO-214AC(SMA) (KiCad packages3D, STEP)
- 3D model files:
vs-10mq100hm3-etched.step/vs-10mq100hm3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vs-10mq100hm3.step/vs-10mq100hm3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
78fd159267b06ad2, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VS-10MQ100HM3
**Vishay Intertech** · Schottky Barrier Diodes (SBD) · DO-214AC(SMA)
VS-10MQ100HM3 from Vishay Intertech, in a DO-214AC(SMA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the cathode band on the SMA (DO-214AC) package; the diode is rated for 100 V maximum DC reverse voltage (VR) and 1 A average forward current. |
| 2 | A | passive | Anode of the single Schottky rectifier in the SMA (DO-214AC) package, with a maximum forward voltage drop of 0.78 V at 1 A and TJ = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DO-214AC(SMA) |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum forward voltage drop | VFM | | | 0.78 | V | 1 A, TJ = 25 °C; pulse width 300 μs, duty cycle 2 % | 2 |
| Maximum forward voltage drop | VFM | | | 0.85 | V | 1.5 A, TJ = 25 °C; pulse width 300 μs, duty cycle 2 % | 2 |
| Maximum forward voltage drop | VFM | | | 0.63 | V | 1 A, TJ = 125 °C; pulse width 300 μs, duty cycle 2 % | 2 |
| Maximum forward voltage drop | VFM | | | 0.68 | V | 1.5 A, TJ = 125 °C; pulse width 300 μs, duty cycle 2 % | 2 |
| Maximum reverse leakage current | IRM | | | 0.1 | mA | TJ = 25 °C, VR = Rated VR | 2 |
| Maximum reverse leakage current | IRM | | | 1 | mA | TJ = 125 °C, VR = Rated VR | 2 |
| Threshold voltage | VF(TO) | | | 0.52 | V | TJ = TJ maximum | 2 |
| Forward slope resistance | rt | | | 78.4 | mΩ | TJ = TJ maximum | 2 |
| Maximum voltage rate of change | dV/dt | | | 10000 | V/μs | Rated VR | 2 |
| Typical junction capacitance | CT | | 38 | | pF | VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz | 2 |
| Typical series inductance | LS | | 2 | | nH | Measured lead to lead 5 mm from package body | 2 |
| Maximum DC reverse voltage | VR | | | 100 | V | | 1 |
| Maximum working peak reverse voltage | VRWM | | | 100 | V | | 1 |
| Maximum average forward current | IF(AV) | | | 1.5 | A | 50 % duty cycle at TL = 126 °C, rectangular waveform, on PC board 9 mm2 island | 1 |
| Maximum average forward current | IF(AV) | | | 1 | A | 50 % duty cycle at TL = 135 °C, rectangular waveform, on PC board 9 mm2 island | 1 |
| Maximum peak one cycle non-repetitive surge current | IFSM | | | 120 | A | 5 μs sine or 3 μs rect. pulse, TJ = 25 °C, following any rated load condition and with rated VRRM applied | 1 |
| Maximum peak one cycle non-repetitive surge current | IFSM | | | 30 | A | 10 ms sine or 6 ms rect. pulse, TJ = 25 °C, following any rated load condition and with rated VRRM applied | 1 |
| Non-repetitive avalanche energy | EAS | | | 1 | mJ | TJ = 25 °C, IAS = 0.5 A, L = 8 mH | 1 |
| Repetitive avalanche current | IAR | | | 0.5 | A | Current decaying linearly to zero in 1 μs, frequency limited by TJ maximum, VA = 1.5 x VR typical | 1 |
| Junction and storage temperature range | TJ, TStg | -55 | | 150 | °C | | 2 |
| Maximum thermal resistance, junction to ambient | RthJA | | | 80 | °C/W | DC operation | 2 |
## CAD (KiCad official)
- Symbol: `VS-10MQ100HM3`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: DO-214AC(SMA) (KiCad packages3D, STEP)
- 3D model files: `vs-10mq100hm3-etched.step` / `vs-10mq100hm3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vs-10mq100hm3.step` / `vs-10mq100hm3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/vs-10mq100hm3-datasheet.pdf) (6 pp, sha256 `78fd159267b06ad2`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vs-10mq100hm3-datasheet.pdf)