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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

VS-10MQ040-M3

Vishay Intertech · Schottky Barrier Diodes (SBD) · SMA(DO-214AC)

VS-10MQ040-M3 from Vishay Intertech, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2	A	passive	Anode.

Key specifications

Parameter	Value
Manufacturer	Vishay Intertech
Package	SMA(DO-214AC)
Category	Diodes
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Maximum average forward current (50% duty, TL = 123 °C)	IF(AV)			1.5	A	50% duty cycle, rectangular waveform, TL = 123 °C, on PC board 9 mm² island (0.013 mm thick copper pad)	1
Maximum average forward current (50% duty, TL = 132 °C)	IF(AV)			1	A	50% duty cycle, rectangular waveform, TL = 132 °C, on PC board 9 mm² island (0.013 mm thick copper pad)	1
Maximum peak one cycle non-repetitive surge current	IFSM			120	A	5 µs sine or 3 µs rect. pulse; following any rated load condition; rated VRRM applied	1
Maximum peak one cycle non-repetitive surge current	IFSM			30	A	10 ms sine or 6 ms rect. pulse	1
Non-repetitive avalanche energy	EAS			3	mJ	TJ = 25 °C, IAS = 1 A, L = 6 mH	1
Repetitive avalanche current	IAR		1		A	Current decaying linearly to zero in 1 µs; frequency limited by TJ maximum; VA = 1.5 x VR	1
Maximum DC reverse voltage	VR			40	V		1
Maximum forward voltage drop	VFM			0.54	V	See fig. 1; 1 A; TJ = 25 °C	2
Maximum forward voltage drop	VFM			0.62	V	See fig. 1; 1.5 A; TJ = 25 °C	2
Maximum forward voltage drop	VFM			0.49	V	See fig. 1; 1 A; TJ = 125 °C	2
Maximum forward voltage drop	VFM			0.56	V	See fig. 1; 1.5 A; TJ = 125 °C	2
Maximum reverse leakage current	IRM			0.5	mA	See fig. 2; VR = Rated VR; TJ = 25 °C	2
Maximum reverse leakage current	IRM			26	mA	See fig. 2; TJ = 125 °C	2
Maximum voltage rate of change	dV/dt			10000	V/µs	Rated VR	2
Maximum junction and storage temperature range	TJ, TStg	-55		150	°C		2
Maximum thermal resistance, junction to ambient	RthJA			80	°C/W	DC operation	2
Threshold voltage	VF(TO)		0.36		V	TJ = TJ maximum	2
Forward slope resistance	rt		104		m		2
Typical junction capacitance	CT		38		pF	VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz	2
Typical series inductance	LS		2		nH	Measured lead to lead 5 mm from package body	2

CAD (KiCad official)

Symbol: VS-10MQ040-M3
Footprint: Diode_SMD:D_SMA
3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
3D model files: vs-10mq040-m3-etched.step / vs-10mq040-m3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-10mq040-m3.step / vs-10mq040-m3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Vishay Intertech datasheet (6 pp, sha256 31e528f00f54e2fe, retrieved 2026-10-21, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF