component
VOM617AT
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVOM617AT
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm
VOM617AT from Vishay Intertech, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the GaAs infrared emitting diode, with a maximum DC forward current of 60 mA and a maximum reverse voltage of 6 V. |
| 2 | C | passive | Cathode of the infrared emitting diode (input side), with a maximum DC forward current of 60 mA and a maximum reverse voltage of 6 V. |
| 3 | E | passive | Emitter of the silicon phototransistor output, with a maximum emitter-collector voltage of 7 V. |
| 4 | C | passive | Collector of the silicon phototransistor output, with a maximum collector-emitter voltage of 80 V and a maximum collector current of 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOP-4-2.54mm |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC forward current | IF | 60 | mA | 2 | |||
| Reverse voltage | VR | 6 | V | 2 | |||
| Power dissipation (input) | Pdiss | 70 | mW | 2 | |||
| Surge forward current | IFSM | 2.5 | A | tp <= 10 us | 2 | ||
| Collector emitter voltage | VCEO | 80 | V | 2 | |||
| Emitter collector voltage | VECO | 7 | V | 2 | |||
| Collector current | IC | 50 | mA | 2 | |||
| Collector current | IC | 100 | mA | tp <= 1 ms | 2 | ||
| Power dissipation (output) | Pdiss | 150 | mW | 2 | |||
| Isolation test voltage | VISO | 3750 | VRMS | between emitter and detector, t = 1 min | 2 | ||
| Total power dissipation | Ptot | 170 | mW | 2 | |||
| Operating temperature range | Tamb | -55 | 110 | °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Junction temperature | Tj | 125 | °C | 2 | |||
| Soldering temperature | Tsld | 260 | °C | 2 | |||
| Current transfer ratio | CTR | 50 | 600 | % | IF = 5 mA, VCE = 5 V | 3 | |
| Forward voltage | VF | 1.1 | 1.6 | V | IF = 5 mA | 3 | |
| Reverse current | IR | 0.01 | 10 | μA | VR = 6 V | 3 | |
| Capacitance | Cj | 9 | pF | VR = 0 V, f = 1 MHz | 3 | ||
| Collector emitter leakage current | ICEO | 0.3 | 100 | nA | VCE = 20 V | 3 | |
| Collector emitter breakdown voltage | BVCEO | 80 | V | IC = 100 μA | 3 | ||
| Emitter collector breakdown voltage | BVECO | 7 | V | IE = 10 μA | 3 | ||
| Collector emitter capacitance | CCE | 2.8 | pF | VCE = 5 V, f = 1 MHz | 3 | ||
| Coupling capacitance | CIO | 0.3 | pF | f = 1 MHz | 3 | ||
| Collector emitter saturation voltage | VCEsat | 0.12 | 0.4 | V | IF = 10 mA, IC = 2.5 mA | 3 | |
| Cut-off frequency | fctr | 110 | kHz | IF = 10 mA, VCC = 5 V, RL = 100 Ω | 3 | ||
| Rise time (non-saturated) | tr | 3 | μs | IC = 2 mA, VCC = 5 V, RL = 100 Ω | 3 | ||
| Fall time (non-saturated) | tf | 3 | μs | IC = 2 mA, VCC = 5 V, RL = 100 Ω | 3 | ||
| Turn-on time (non-saturated) | ton | 6 | μs | IC = 2 mA, VCC = 5 V, RL = 100 Ω | 3 | ||
| Turn-off time (non-saturated) | toff | 4 | μs | IC = 2 mA, VCC = 5 V, RL = 100 Ω | 3 | ||
| Rise time (saturated) | tr | 7 | μs | IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ | 3 | ||
| Fall time (saturated) | tf | 12 | μs | IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ | 3 | ||
| Turn-on time (saturated) | ton | 9 | μs | IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ | 3 | ||
| Turn-off time (saturated) | toff | 15 | μs | IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ | 3 | ||
| Output safety power | PSO | 300 | mW | 4 | |||
| Input safety current | Isi | 200 | mW | 4 | |||
| Safety temperature | TS | 150 | °C | 4 | |||
| Maximum transient isolation voltage | VIOTM | 6000 | Vpeak | 4 | |||
| Maximum repetitive peak isolation voltage | VIORM | 565 | Vpeak | 4 |
CAD (KiCad official)
- Symbol:
VOM617AT - Footprint:
Package_SO:SOP-4_3.8x4.1mm_P2.54mm - 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
- 3D model files:
vom617at-etched.step/vom617at-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vom617at.step/vom617at.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
32816adc07231589, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).