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VOM617A-4T

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VOM617A-4T

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm

VOM617A-4T from Vishay Intertech, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input LED anode of the GaAs infrared emitter, rated for a maximum DC forward current of 60 mA and a maximum reverse voltage of 6 V.
2 C passive LED cathode of the input emitter, rated for a maximum DC forward current of 60 mA and a maximum reverse voltage of 6 V.
3 E passive Phototransistor emitter, with a maximum emitter-collector voltage of 7 V.
4 C passive Phototransistor collector, with a maximum collector-emitter voltage of 80 V and a maximum collector current of 50 mA.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOP-4-2.54mm
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Current transfer ratio CTR 160 320 % IF = 5 mA, VCE = 5 V 3
Collector emitter breakdown voltage BVCEO 80 V IC = 100 μA 3
Emitter collector breakdown voltage BVECO 7 V IE = 10 μA 3
Collector emitter leakage current ICEO 0.3 100 nA VCE = 20 V 3
Reverse current IR 0.01 10 μA VR = 6 V 3
Forward voltage VF 1.1 1.6 V IF = 5 mA 3
Capacitance Cj 9 pF VR = 0 V, f = 1 MHz 3
Collector emitter capacitance CCE 2.8 pF VCE = 5 V, f = 1 MHz 3
Coupling capacitance CIO 0.3 pF f = 1 MHz 3
Collector emitter saturation voltage VCEsat 0.12 0.4 V IF = 10 mA, IC = 2.5 mA 3
Cut-off frequency fctr 110 kHz IF = 10 mA, VCC = 5 V, RL = 100 Ω 3
Rise and fall time (non-saturated) tr 3 μs IC = 2 mA, VCC = 5 V, RL = 100 Ω 3
Fall time (non-saturated) tf 3 μs IC = 2 mA, VCC = 5 V, RL = 100 Ω 3
Turn-on time (non-saturated) ton 6 μs IC = 2 mA, VCC = 5 V, RL = 100 Ω 3
Turn-off time (non-saturated) toff 4 μs IC = 2 mA, VCC = 5 V, RL = 100 Ω 3
Rise and fall time (saturated) tr 7 μs IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ 3
Fall time (saturated) tf 12 μs IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ 3
Turn-on time (saturated) ton 9 μs IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ 3
Turn-off time (saturated) toff 15 μs IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ 3
DC forward current IF 60 mA 2
Reverse voltage VR 6 V 2
Power dissipation (input) Pdiss 70 mW 2
Surge forward current IFSM 2.5 A tp ≤ 10 μs 2
Collector emitter voltage VCEO 80 V 2
Emitter collector voltage VECO 7 V 2
Collector current IC 50 mA 2
Collector current (pulsed) IC 100 mA tp ≤ 1 ms 2
Power dissipation (output) Pdiss 150 mW 2
Isolation test voltage between emitter and detector VISO 3750 VRMS t = 1 min 2
Total power dissipation Ptot 170 mW 2
Operating temperature range Tamb -55 110 °C 2
Storage temperature range Tstg -55 150 °C 2
Junction temperature Tj 125 °C 2
Soldering temperature Tsld 260 °C 2

CAD (KiCad official)

  • Symbol: VOM617A-4T
  • Footprint: Package_SO:SOP-4_3.8x4.1mm_P2.54mm
  • 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
  • 3D model files: vom617a-4t-etched.step / vom617a-4t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vom617a-4t.step / vom617a-4t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 1f76ecedd78abaf2, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF