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VOL617A-3X001T

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VOL617A-3X001T

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm

VOL617A-3X001T from Vishay Intertech, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the GaAs infrared emitting diode; the input is rated for a reverse voltage of 6 V and a forward current of 60 mA.
2 C passive Cathode of the GaAs infrared emitting diode; the forward surge current is 1.5 A for tp < 10 µs.
3 E passive Emitter of the silicon planar phototransistor; the emitter-collector voltage VECO is 7 V maximum.
4 C passive Collector of the silicon planar phototransistor; the collector-emitter voltage VCEO is 80 V and the collector current IC is 50 mA.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOP-4-2.54mm
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage (input) VR 6 V 2
Power dissipation (input) Pdiss 100 mW 2
Forward surge current (input) IFSM 1.5 A tp < 10 μs 2
Forward current (input) IF 60 mA 2
Junction temperature (input) Tj 125 °C 2
Collector emitter voltage (output) VCEO 80 V 2
Emitter collector voltage (output) VECO 7 V 2
Collector current (output) IC 50 mA 2
Collector current (output, pulsed) IC 100 mA tp/T = 0.5, tp < 10 ms 2
Power dissipation (output) Pdiss 150 mW 2
Junction temperature (output) Tj 125 °C 2
Total power dissipation (coupler) Ptot 250 mW 2
Storage temperature range Tstg -55 125 °C 2
Ambient temperature range Tamb -55 110 °C 2
Soldering temperature Tsld 260 °C ≤ 10 s 2
Forward voltage VF 1.16 1.5 V IF = 5 mA 2
Reverse current IR 100 μA VR = 6 V 2
Collector emitter leakage current ICEO 10 200 nA VCE = 10 V, IF = 0 A 2
Collector emitter saturation voltage VCEsat 0.25 0.4 V IC = 1.0 mA, IF = 5 mA 2
Current transfer ratio (VOL617A-3) CTR 100 200 % IF = 5 mA, VCE = 5 V 3

CAD (KiCad official)

  • Symbol: VOL617A-3X001T
  • Footprint: Package_SO:SOP-4_3.8x4.1mm_P2.54mm
  • 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
  • 3D model files: vol617a-3x001t-etched.step / vol617a-3x001t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vol617a-3x001t.step / vol617a-3x001t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 ad3ff782f0cd000b, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF