component
VO208AT
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVO208AT
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · SOIC-8
VO208AT from Vishay Intertech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | input | LED anode; forward current IF max 60 mA continuous, VF typ 1.3 V at IF = 10 mA. |
| 2 | K | input | LED cathode; peak reverse voltage VR max 6 V. |
| 3 | NC | unconnected | No internal connection. |
| 4 | NC | unconnected | No internal connection. |
| 5 | E | passive | Phototransistor emitter; BVECO 7 V min (emitter-collector breakdown). |
| 6 | C | passive | Phototransistor collector; BVCEO 70 V min, IC max 50 mA DC (100 mA for t < 1 ms). |
| 7 | B | passive | Phototransistor base connection; collector-base breakdown BVCBO 70 V absolute maximum. |
| 8 | NC | unconnected | No internal connection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOIC-8 |
| Category | Optoisolators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.3 | 1.5 | V | IF = 10 mA | 2 | |
| Reverse current | IR | 0.1 | 100 | μA | VR = 6 V | 2 | |
| Collector emitter breakdown voltage | BVCEO | 70 | V | IC = 100 μA | 2 | ||
| Emitter collector breakdown voltage | BVECO | 7 | 10 | V | IE = 10 μA | 2 | |
| Collector base breakdown voltage | BVCBO | 100 | V | IC = 100 μA | 2 | ||
| Collector base current | ICBO | 1 | nA | 2 | |||
| Emitter base current | IEBO | 1 | nA | 2 | |||
| Collector emitter leakage current | ICEO | 5 | 50 | nA | VCE = 10 V | 2 | |
| Saturation voltage, collector emitter | VCEsat | 0.4 | V | IC = 2 mA, IF = 10 mA | 2 | ||
| Current transfer ratio | CTR | 160 | 320 | % | IF = 10 mA, VCE = 5 V | 2 | |
| Isolation test voltage | VISO | 4000 | VRMS | 1 s | 3 | ||
| Peak transient overvoltage | VIOTM | 6000 | V | 3 | |||
| Peak insulation voltage | VIORM | 560 | V | 3 | |||
| Safety rating - power output | PSO | 350 | mW | 3 | |||
| Safety rating - input current | ISI | 150 | mA | 3 | |||
| Safety rating - temperature | TSI | 165 | °C | 3 | |||
| Comparative tracking index | CTI | 175 | 399 | 3 | |||
| Peak reverse voltage | VR | 6 | V | 1 | |||
| Forward continuous current | IF | 60 | mA | 1 | |||
| Peak forward current | IFM | 1 | A | 1 μs, 300 pps | 1 | ||
| Input power dissipation | Pdiss | 90 | mW | INPUT | 1 | ||
| Collector emitter breakdown voltage | BVCEO | 70 | V | 1 | |||
| Emitter collector breakdown voltage | BVECO | 7 | V | 1 | |||
| Collector-base breakdown voltage | BVCBO | 70 | V | 1 | |||
| Collector current DC | ICmax. DC | 50 | mA | 1 | |||
| Collector current | ICmax. | 100 | mA | t < 1 ms | 1 | ||
| Output power dissipation | Pdiss | 150 | mW | OUTPUT | 1 | ||
| Isolation test voltage | VISO | 4000 | VRMS | 1 | |||
| Total package dissipation | Ptot | 240 | mW | LED and detector | 1 | ||
| Operating temperature | Tamb | -40 | 100 | °C | 1 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 1 | ||
| Soldering time at 260 °C | Tsld | 10 | s | 1 | |||
| Input capacitance | CO | 13 | pF | VR = 0 V | 2 | ||
| Capacitance, input to output | CIO | 0.5 | pF | 2 | |||
| Turn-on time | ton | 3 | μs | IC = 2 mA, RL = 100 Ω, VCC = 10 V | 2 | ||
| Turn-off time | toff | 3 | μs | IC = 2 mA, RL = 100 Ω, VCC = 10 V | 2 | ||
| Rise time | tr | 3 | μs | IC = 2 mA, RL = 100 Ω, VCC = 10 V | 2 | ||
| Fall time | tf | 2 | μs | IC = 2 mA, RL = 100 Ω, VCC = 10 V | 2 | ||
| Resistance (input to output) | RIO | 100 | GΩ | 3 | |||
| Common mode transient immunity at logic high | /CMH/ | 5000 | V/μs | VCM = 1000 VP-P, RL = 1 kΩ, IF = 0 mA | 3 | ||
| Common mode transient immunity at logic low | /CML/ | 5000 | V/μs | VCM = 1000 VP-P, RL = 1 kΩ, IF = 10 mA | 3 |
CAD (KiCad official)
- Symbol:
VO208AT - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
vo208at-etched.step/vo208at-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vo208at.step/vo208at.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
5047e2c31ca03f85, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).