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VNS3NV04PTR-E
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STMicroelectronics Gate Drivers, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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VNS3NV04PTR-E
STMicroelectronics · Gate Drivers · SO-8
VNS3NV04PTR-E from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE | passive | Source of the power MOSFET (shared with pins 2 and 3), the reference for the input voltage. |
| 2 | SOURCE | passive | Source of the power MOSFET (shared with pins 1 and 3), the reference for the input voltage. |
| 3 | SOURCE | passive | Source of the power MOSFET (shared with pins 1 and 2), the reference for the input voltage. |
| 4 | INPUT | input | Input connected to the gate of the power MOSFET through a low impedance path, drawing IISS typ. 100 µA, with at least 220 Ω series impedance, and sinking Igf 10 to 20 mA on over-temperature fault. |
| 5 | DRAIN | passive | Drain of the power MOSFET (shared with pins 6 to 8), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
| 6 | DRAIN | passive | Drain of the power MOSFET (shared with pins 5, 7 and 8), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
| 7 | DRAIN | passive | Drain of the power MOSFET (shared with pins 5, 6 and 8), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
| 8 | DRAIN | passive | Drain of the power MOSFET (shared with pins 5 to 7), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SO-8 |
| Category | Motor Driver ICs |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
VNS3NV04PTR-E - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
vns3nv04ptr-e-etched.step/vns3nv04ptr-e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vns3nv04ptr-e.step/vns3nv04ptr-e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
5e966771e7dede63, retrieved 2026-10-11, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VNS3NV04PTR-E
**STMicroelectronics** · Gate Drivers · SO-8
VNS3NV04PTR-E from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE | passive | Source of the power MOSFET (shared with pins 2 and 3), the reference for the input voltage. |
| 2 | SOURCE | passive | Source of the power MOSFET (shared with pins 1 and 3), the reference for the input voltage. |
| 3 | SOURCE | passive | Source of the power MOSFET (shared with pins 1 and 2), the reference for the input voltage. |
| 4 | INPUT | input | Input connected to the gate of the power MOSFET through a low impedance path, drawing IISS typ. 100 µA, with at least 220 Ω series impedance, and sinking Igf 10 to 20 mA on over-temperature fault. |
| 5 | DRAIN | passive | Drain of the power MOSFET (shared with pins 6 to 8), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
| 6 | DRAIN | passive | Drain of the power MOSFET (shared with pins 5, 7 and 8), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
| 7 | DRAIN | passive | Drain of the power MOSFET (shared with pins 5, 6 and 8), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
| 8 | DRAIN | passive | Drain of the power MOSFET (shared with pins 5 to 7), internally clamped at 40 V min / 45 V typ, with current limited to Ilim 3.5 to 7 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SO-8 |
| Category | Motor Driver ICs |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `VNS3NV04PTR-E`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `vns3nv04ptr-e-etched.step` / `vns3nv04ptr-e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vns3nv04ptr-e.step` / `vns3nv04ptr-e.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603069019411275776) (22 pp, sha256 `5e966771e7dede63`, retrieved 2026-10-11, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vns3nv04ptr-e-datasheet.pdf)