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VBZMB4N65

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

VBZMB4N65

VBsemi Elec · MOSFETs · TO-220F

VBZMB4N65 from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±30 V in the absolute maximum ratings.
2 D passive Drain terminal; the datasheet rates VDS at 650 V and continuous drain current at 3.8 A with TC = 100 °C.
3 S passive Source terminal; continuous source-drain diode current is rated at 4 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 3.8 A TC = 100 °C 1
Pulsed Drain Current IDM 18 A 1
Linear Derating Factor 0.48 W/°C 1
Single Pulse Avalanche Energy EAS 325 mJ 1
Repetitive Avalanche Current IAR 4 A 1
Repetitive Avalanche Energy EAR 6 mJ 1
Maximum Power Dissipation PD 30 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 2.8 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 6-32 or M3 screw 10 lbf · in 1
Mounting Torque 6-32 or M3 screw 1.1 N · m 1
Maximum Junction-to-Ambient RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 2.1 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 3.9 S VDS = 50 V, ID = 3.1 A 2
Continuous Source-Drain Diode Current IS 4 A 2
Pulsed Diode Forward Current ISM 21 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 3.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 493 739 ns TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 µC TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Total Gate Charge Qg 48 nC VGS = 10 V ID = 3.2 A, VDS = 400 V 2
Gate-Source Charge Qgs 12 nC VGS = 10 V ID = 3.2 A, VDS = 400 V 2
Gate-Drain Charge Qgd 19 nC VGS = 10 V ID = 3.2 A, VDS = 400 V 2

CAD (KiCad official)

  • Symbol: VBZMB4N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 d9b86822d62a4b67, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF