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VBZMB2N65

VBsemi Elec · MOSFETs · TO-220F

VBZMB2N65 from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate-source voltage is rated ±30 V and the gate-source threshold voltage is 2.0 V to 4.0 V.
2	D	passive	Drain-source breakdown voltage is 650 V minimum and RDS(on) is 4.0 Ω maximum at VGS = 10 V.
3	S	passive	Continuous source-drain diode current IS is 2 A and pulsed diode forward current ISM is 8 A, with body diode voltage VSD of 1.5 V maximum.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-220F
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			650	V		1
Gate-Source Voltage	VGS	-30		30	V		1
Continuous Drain Current	ID			1.28	A	TC = 100 °C	1
Pulsed Drain Current	IDM			8	A		1
Linear Derating Factor				0.48	W/°C		1
Single Pulse Avalanche Energy	EAS			165	mJ		1
Repetitive Avalanche Current	IAR			2	A		1
Repetitive Avalanche Energy	EAR			6	mJ		1
Maximum Power Dissipation	PD			25	W	TC = 25 °C	1
Peak Diode Recovery dV/dt	dV/dt			2.8	V/ns		1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Soldering Recommendations (Peak Temperature)				300		for 10 s	1
Mounting Torque				10	lbf · in	6-32 or M3 screw	1
Mounting Torque				1.1	N · m	6-32 or M3 screw	1
Maximum Junction-to-Ambient	RthJA			65	°C/W		2
Maximum Junction-to-Case (Drain)	RthJC			2.1	°C/W		2
Drain-Source Breakdown Voltage	VDS	650			V	VGS = 0 V, ID = 250 µA	2
VDS Temperature Coefficient	ΔVDS/TJ		670		mV/°C	Reference to 25 °C, ID = 1 mA	2
Gate-Source Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ± 30 V	2
Zero Gate Voltage Drain Current	IDSS			25	µA	VDS = 650 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 520 V, VGS = 0 V, TJ = 125 °C	2
Drain-Source On-State Resistance	RDS(on)			4	Ω	VGS = 10 V ID = 1 A	2
Forward Transconductance	gfs	3.9			S	VDS = 50 V, ID = 1 A	2
Total Gate Charge	Qg			11	nC		1
Continuous Source-Drain Diode Current	IS			2	A		2
Pulsed Diode Forward Current	ISM			-8	A		2
Body Diode Voltage	VSD			1.5	V	TJ = 25 °C, IS = 3.2 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		180	230	ns	TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs	2
Body Diode Reverse Recovery Charge	Qrr		2.1	3.2	µC	TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs	2

CAD (KiCad official)

Symbol: VBZMB2N65
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 166ebaebec4dbe43, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF