# VBZM80N04

**VBsemi Elec** · MOSFETs · TO-220AB

VBZM80N04 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain terminal; continuous drain current is rated 110 A at TC = 25 °C, with package limitation current of 110 A. |
| 3 | S | passive | Source terminal; continuous source-drain diode current is rated 110 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (TJ = 175 °C), TC = 25 °C | ID |  |  | 110 | A | TJ = 175 °C, TC = 25 °C | 1 |
| Continuous Drain Current (TJ = 175 °C), TC = 70 °C | ID |  |  | 90 | A | TJ = 175 °C, TC = 70 °C | 1 |
| Continuous Drain Current, TA = 25 °C | ID |  |  | 31 | A | TA = 25 °C, surface mounted on 1in x 1in FR4 board (note b) | 1 |
| Continuous Drain Current, TA = 70 °C | ID |  |  | 25 | A | TA = 70 °C, surface mounted on 1in x 1in FR4 board (note b) | 1 |
| Pulsed Drain Current | IDM |  |  | 270 | A |  | 1 |
| Avalanche Current Pulse | IAS |  |  | 85 | A | L = 0.1 mH | 1 |
| Continuous Source-Drain Diode Current, TC = 25 °C | IS |  |  | 110 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current, TA = 25 °C | IS |  |  | 2.6 | A | TA = 25 °C, surface mounted (note b) | 1 |
| Maximum Power Dissipation, TC = 25 °C | PD |  |  | 312 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation, TC = 70 °C | PD |  |  | 200 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation, TA = 25 °C | PD |  |  | 3.13 | W | TA = 25 °C, surface mounted (note b) | 1 |
| Maximum Power Dissipation, TA = 70 °C | PD |  |  | 2 | W | TA = 70 °C, surface mounted (note b) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient, steady state | RthJA |  | 32 | 40 | °C/W | Steady state, surface mounted (note b) | 1 |
| Maximum Junction-to-Case, steady state | RthJC |  | 0.33 | 0.4 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 40 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current, TJ = 55 °C | IDSS |  |  | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 120 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 6 | mΩ | VGS = 10 V, ID = 30 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 7 | mΩ | VGS = 4.5 V, ID = 20 A | 2 |
| Gate Resistance | Rg |  | 0.85 | 1.3 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 20 | 30 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 11 | 17 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 77 | 115 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 10 | 15 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 102 | 155 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 62 | 95 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 180 | 270 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 60 | 90 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 110 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 200 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 20 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 50 | 75 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 70 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `VBZM80N04`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `vbzm80n04-etched.step` / `vbzm80n04-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbzm80n04.step` / `vbzm80n04.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609165958418350080) (7 pp, sha256 `acb07e1ef0ed10c0`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbzm80n04-datasheet.pdf)