# VBZM75NF75

**VBsemi Elec** · MOSFETs · TO-220AB

VBZM75NF75 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±20 V (VGS(th) 2.0 to 3.5 V at ID = 250 μA). |
| 2 | D | passive | Drain terminal; drain-source voltage rated 80 V with pulsed drain current up to 350 A (t = 100 μs). |
| 3 | S | passive | Source terminal; continuous source-drain diode current 75 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 80 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 80 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS = 80 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 85 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 7 | mΩ | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 7.5 | mΩ | VGS = 6 V, ID = 15 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 9 | mΩ | VGS = 4.5 V, ID = 10 A | 2 |
| Gate Resistance | Rg | 0.5 | 1.3 | 2 | Ω | f = 1 MHz | 2 |
| Output Charge | Qoss |  | 57 | 86 | nC | VDS = 40 V, VGS = 0 V | 2 |
| Turn-On Delay Time | td(on) |  | 12 | 24 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 8 | 16 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 32 | 64 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 7 | 14 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 14 | 28 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 11 | 22 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 30 | 60 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 8 | 16 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 75 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 150 | A | t = 100 μs | 2 |
| Body Diode Voltage | VSD |  | 0.76 | 1.1 | V | IS = 5 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 38 | 75 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 36 | 70 | nC | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS |  |  | 80 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 350 | A | t = 100 μs | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 30 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 45 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 180 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 120 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 5 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 3.2 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 15 | 18 | °C/W | t ≤ 10 sec | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 40 | 50 | °C/W | Steady State | 1 |
| Maximum Junction-to-Case | RthJC |  | 0.85 | 1.1 | °C/W | Steady State | 1 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 37 |  | mV/°C | ID = 250 μA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ |  | -6.1 |  | mV/°C | ID = 250 μA | 2 |
| Forward Transconductance | gfs |  | 60 |  | S | VDS = 10 V, ID = 20 A | 2 |
| Input Capacitance | Ciss |  | 3855 |  | pF | VDS = 40 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 1120 |  | pF | VDS = 40 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 376 |  | pF | VDS = 40 V, VGS = 0 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 35.5 |  | nC | VDS = 40 V, VGS = 10 V, ID = 10 A | 2 |
| Gate-Source Charge | Qgs |  | 5.3 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 7.3 |  | nC |  | 2 |

## CAD (KiCad official)

- Symbol: `VBZM75NF75`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `vbzm75nf75-etched.step` / `vbzm75nf75-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbzm75nf75.step` / `vbzm75nf75.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/vbzm75nf75-datasheet.pdf) (8 pp, sha256 `a8a67c53e14fe4ad`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbzm75nf75-datasheet.pdf)