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VBZM150N10

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBZM150N10

VBsemi Elec · MOSFETs · TO-220AB

VBZM150N10 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V with a threshold of 2.5 V to 4 V at ID = 250 μA.
2 D passive Drain; drain-source voltage is rated 100 V and continuous drain current 120 A (package limited) at TC = 25 °C.
3 S passive Source; carries the full drain current up to 120 A continuous and 480 A pulsed (t = 100 μs).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate Threshold Voltage VGS(th) 2.5 4 V VDS = VGS, ID = 250 μA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 150 μA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 5 mA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 10 V, VGS = 10 V 2
Total Gate Charge Qg 76 120 nC VDS = 50 V, VGS = 10 V, ID = 20 A 2
Gate Resistance Rg 0.6 3.3 6.6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 15 30 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 22 40 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 55 100 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 15 30 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Pulsed Current ISM 480 A TC = 25 °C 2
Body Diode Forward Voltage VSD 0.8 1.5 V IF = 10 A, VGS = 0 V 2
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 120 A TJ = 150 °C, TC = 25 °C 1
Pulsed Drain Current IDM 480 A t = 100 μs 1
Avalanche Current IAS 73 A 1
Single Avalanche Energy EAS 266 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 370 W TC = 25 °C 1
Maximum Power Dissipation PD 120 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W 1
Junction-to-Case (Drain) RthJC 0.4 °C/W 1
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.006 Ω VGS = 7.5 V, ID = 15 A 2
Forward Transconductance gfs 82 S VDS = 15 V, ID = 20 A 2
Input Capacitance Ciss 10000 pF VGS = 0 V, VDS = 50 V, f = 1 MHz 2
Output Capacitance Coss 2025 pF VGS = 0 V, VDS = 50 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 165 pF VGS = 0 V, VDS = 50 V, f = 1 MHz 2
Gate-Source Charge Qgs 23 nC VDS = 50 V, VGS = 10 V, ID = 20 A 2
Gate-Drain Charge Qgd 17 nC VDS = 50 V, VGS = 10 V, ID = 20 A 2

CAD (KiCad official)

  • Symbol: VBZM150N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: vbzm150n10-etched.step / vbzm150n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbzm150n10.step / vbzm150n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 3185630fbe805d5f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF