# VBZM150N03

**VBsemi Elec** · MOSFETs · TO-220AB

VBZM150N03 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1.0 to 3.0 V. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage rated 30 V with continuous current up to 140 A per product summary. |
| 3 | S | passive | Source; continuous source-drain diode current 90 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 24 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 90 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Total Gate Charge | Qg |  | 171 | 257 | nC | VDS = 15 V, VGS = 10 V, ID = 38.8 A | 2 |
| Total Gate Charge | Qg |  | 81.5 | 123 | nC | VDS = 15 V, VGS = 4.5 V, ID = 28.8 A | 2 |
| Gate Resistance | Rg |  | 1.4 | 2.1 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 18 | 27 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 11 | 17 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 70 | 105 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 10 | 15 | ns | VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 55 | 83 | ns | VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 180 | 270 | ns | VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 55 | 83 | ns | VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 12 | 18 | ns | VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 22 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 52 | 78 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 70.2 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 110 | A | TJ = 175 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 39 | A | TJ = 175 °C, TA = 25 °C | 1 |
| Avalanche Current | IAS |  |  | 39 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 375 | mJ | L = 0.1 mH | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 90 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 3.13 | A | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 250 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 175 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 3.75 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.63 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 32 | 40 | °C/W | t ≤ 10 sec | 1 |
| Maximum Junction-to-Case | RthJC |  | 0.5 | 0.6 | °C/W | Steady State | 1 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 35 |  | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ |  | -7.5 |  | mV/°C | ID = 250 µA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.002 |  | Ω | VGS = 10 V, ID = 38.8 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.0028 |  | Ω | VGS = 4.5 V, ID = 37 A | 2 |
| Forward Transconductance | gfs |  | 160 |  | S | VDS = 15 V, ID = 38.8 A | 2 |
| Reverse Recovery Fall Time | ta |  | 27 |  | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Rise Time | tb |  | 25 |  | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Input Capacitance | Ciss |  | 8400 |  | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 1725 |  | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 970 |  | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs |  | 34 |  | nC | VDS = 15 V, VGS = 10 V, ID = 38.8 A | 2 |
| Gate-Drain Charge | Qgd |  | 29 |  | nC | VDS = 15 V, VGS = 10 V, ID = 38.8 A | 2 |

## CAD (KiCad official)

- Symbol: `VBZM150N03`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `vbzm150n03-etched.step` / `vbzm150n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbzm150n03.step` / `vbzm150n03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/vbzm150n03-datasheet.pdf) (7 pp, sha256 `5e32a3af4dc9bf61`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbzm150n03-datasheet.pdf)