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VBZFB40N03

VBsemi Elec · MOSFETs · TO-251

VBZFB40N03 from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2 D passive Drain terminal of the N-channel MOSFET, with a maximum drain-source voltage of 30 V.
3 S passive Source terminal of the N-channel MOSFET, with a continuous source-drain diode current of 15 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors
Pins 3

CAD (KiCad official)

  • Symbol: VBZFB40N03
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: vbzfb40n03-etched.step / vbzfb40n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbzfb40n03.step / vbzfb40n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 fab72535ccf4db4c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF