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VBZFB12P10

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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBZFB12P10

VBsemi Elec · MOSFETs · TO-251

VBZFB12P10 from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
2 D passive Drain terminal; drain-source voltage is rated -100 V with continuous drain current of -9 A at TC = 25 °C.
3 S passive Source terminal; reference for gate-source voltage and the body diode.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -9 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -8 A TC = 70 °C 1
Pulsed Drain Current IDM -30 A 1
Avalanche Current IAS -20 A 1
Single Avalanche Energy EAS 16.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 32.1 W TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 50 °C/W 1
Junction-to-Case (Drain) RthJC 3.9 °C/W 1
Drain-Source Breakdown Voltage VDS -100 V VDS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -100 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -15 A VDS ≤ -10 V, VGS = -10 V 2
Rise Time tr 12 18 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 7 14 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 33 50 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Gate Resistance Rg 1.2 5.7 11.5 Ω f = 1 MHz 2
Continuous Current (body diode) IS -8.8 A TC = 25 °C 2
Pulsed Current (body diode) ISM -15 A 2
Forward Voltage VSD -0.8 -1.5 V IF = -2.9 A, VGS = 0 V 2
Reverse Recovery Time trr 50 75 ns IF = -2.9 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) -4 -6 A 2
Reverse Recovery Charge Qrr 98 147 nC 2

CAD (KiCad official)

  • Symbol: VBZFB12P10
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: vbzfb12p10-etched.step / vbzfb12p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbzfb12p10.step / vbzfb12p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 85455e5622437c60, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF