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Generated by kicad-footprint-generator · KiCad file format 20260206

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VBZE7843

VBsemi Elec · MOSFETs · TO-252

VBZE7843 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET, with gate-source voltage rated at ±20 V.
2	D	passive	Drain of the N-channel MOSFET, with drain-source voltage rated at 30 V.
3	S	passive	Source of the N-channel MOSFET, with continuous source-drain diode current rated at 90 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			30	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current TC = 25 °C	ID			160	A	TJ = 175 °C, TC = 25 °C	1
Continuous Drain Current TC = 70 °C	ID			90	A	TJ = 175 °C, TC = 70 °C	1
Continuous Drain Current TA = 25 °C	ID			100	A	TA = 25 °C, surface mounted, t = 10 sec	1
Continuous Drain Current TA = 70 °C	ID			70	A	TA = 70 °C, surface mounted, t = 10 sec	1
Pulsed Drain Current	IDM			300	A		1
Single Pulse Avalanche Energy	EAS			50	mJ		1
Continuous Source-Drain Diode Current TC = 25 °C	IS			90	A	TC = 25 °C	1
Continuous Source-Drain Diode Current TA = 25 °C	IS			3.13	A	TA = 25 °C, surface mounted	1
Maximum Power Dissipation TC = 25 °C	PD			235	W	TC = 25 °C	1
Maximum Power Dissipation TC = 70 °C	PD			165	W	TC = 70 °C	1
Maximum Power Dissipation TA = 25 °C	PD			75	W	TA = 25 °C, surface mounted	1
Maximum Power Dissipation TA = 70 °C	PD			63	W	TA = 70 °C, surface mounted	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Maximum Junction-to-Ambient	RthJA		32	40	°C/W	t ≤ 10 sec	1
Maximum Junction-to-Case	RthJC		0.5	0.6	°C/W	Steady State	1
Drain-Source Breakdown Voltage	VDS	30			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	1.5		2.5	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current TJ = 55 °C	IDSS			10	µA	VDS = 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	90			A	VDS ≥ 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.0025	Ω	VGS = 10 V, ID = 38.8 A	2
Drain-Source On-State Resistance	RDS(on)			0.005	Ω	VGS = 4.5 V, ID = 37 A	2
Gate Resistance	Rg		1.4	2.1	Ω	f = 1 MHz	2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 22 A	2
Body Diode Reverse Recovery Time	trr		52	78	ns	IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		70.2	105	nC	IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C	2
Turn-On Delay Time	td(on)		18	27	ns	VDD = 15 V, RL = 0.625 Ω, ID ≈ 24 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		11	17	ns	VDD = 15 V, RL = 0.625 Ω, ID ≈ 24 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		70	105	ns	VDD = 15 V, RL = 0.625 Ω, ID ≈ 24 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		10	15	ns	VDD = 15 V, RL = 0.625 Ω, ID ≈ 24 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		55	83	ns	VDD = 15 V, RL = 0.67 Ω, ID ≈ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		180	270	ns	VDD = 15 V, RL = 0.67 Ω, ID ≈ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		55	83	ns	VDD = 15 V, RL = 0.67 Ω, ID ≈ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time	tf		12	18	ns	VDD = 15 V, RL = 0.67 Ω, ID ≈ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			120	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			120	A		2
VDS Temperature Coefficient	VDS/TJ		35		mV/°C	ID = 250 µA	2
VGS(th) Temperature Coefficient	VGS(th)/TJ		-7.5		mV/°C		2
On-State Drain Current Forward Transconductance	gfs		160		S	VDS = 15 V, ID = 38.8 A	2
Input Capacitance	Ciss		4200		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		1525		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		770		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Total Gate Charge	Qg		100		nC	VDS = 15 V, VGS = 10 V, ID = 38.8 A	2
Total Gate Charge	Qg		71.5		nC	VDS = 15 V, VGS = 4.5 V, ID = 28.8 A	2
Gate-Source Charge	Qgs		30		nC		2
Gate-Drain Charge	Qgd		24		nC		2
Reverse Recovery Fall Time	ta		27		ns		2
Reverse Recovery Rise Time	tb		25		ns		2

CAD (KiCad official)

Symbol: VBZE7843
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: vbze7843-etched.step / vbze7843-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbze7843.step / vbze7843.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 7c3788fa75fb826d, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF