component
VBZE50N04
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownVBZE50N04
VBsemi Elec · MOSFETs · TO-252
VBZE50N04 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±25 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source breakdown voltage is 40 V minimum at VGS = 0 V and ID = 250 µA, with continuous drain current of 85 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET; continuous source-drain diode current is 110 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TC = 25 °C | ID | 85 | A | TJ = 175 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TC = 70 °C | ID | 70 | A | TJ = 175 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TA = 25 °C | ID | 59 | A | TJ = 175 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TA = 70 °C | ID | 53 | A | TJ = 175 °C, TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 250 | A | 1 | |||
| Avalanche Current Pulse | IAS | 80 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 320 | V | L = 0.1 mH | 1 | ||
| Continuous Source-Drain Diode Current, TC = 25 °C | IS | 110 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current, TA = 25 °C | IS | 2.6 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, TC = 25 °C | PD | 312 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, TC = 70 °C | PD | 200 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 3.13 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, TA = 70 °C | PD | 2 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 32 | 40 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 0.33 | 0.4 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 120 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.005 | Ω | VGS = 10 V, ID = 30 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0065 | Ω | VGS = 4.5 V, ID = 20 A | 2 | ||
| Total Gate Charge | Qg | 80 | 120 | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 | |
| Gate Resistance | Rg | 0.85 | 1.3 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 20 | 30 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 77 | 115 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 102 | 155 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 62 | 95 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 180 | 270 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 60 | 90 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 20 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 50 | 75 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 70 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 41 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -8 | mV/°C | 2 |
CAD (KiCad official)
- Symbol:
VBZE50N04 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vbze50n04-etched.step/vbze50n04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbze50n04.step/vbze50n04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
58ec7fd450632fc5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).