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VBZC8205A

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VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsvbzc8205afactory-2.0.0extractor-text

Verified VBZC8205A

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: VBZC8205A · TSSOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TSSOP-8_4.4x3mm_P0.65mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-7oncqio9/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ vbzc8205a.kicad_sym✓ vbzc8205a.kicad_mod✓ vbzc8205a.step
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VBZC8205A

VBsemi Elec · MOSFETs · TSSOP-8

VBZC8205A from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the dual N-channel MOSFET (shown as a single common D in the schematic), rated VDS 25 V and ID 6.6 A (10 s) per channel.
2 S1 passive Source of MOSFET 1, with continuous source current IS of 1.5 A (10 s) and 1.0 A steady state.
3 S1 passive Source of MOSFET 1, tied with pin 2, with continuous source current IS of 1.5 A (10 s) and 1.0 A steady state.
4 G1 input Gate of MOSFET 1, with maximum gate-source voltage of ±12 V and threshold VGS(th) of 0.5 V min to 1.0 V.
5 G2 input Gate of MOSFET 2, with maximum gate-source voltage of ±12 V and threshold VGS(th) of 0.5 V min to 1.0 V.
6 S2 passive Source of MOSFET 2, tied with pin 7, with continuous source current IS of 1.5 A (10 s) and 1.0 A steady state.
7 S2 passive Source of MOSFET 2, with continuous source current IS of 1.5 A (10 s) and 1.0 A steady state.
8 D passive Drain of the dual N-channel MOSFET (shown as a single common D in the schematic), rated VDS 25 V and ID 6.6 A (10 s) per channel.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSSOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 25 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current (TJ = 150 °C) ID 6.6 A TA = 25 °C; t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C) ID 5.2 A TA = 25 °C; steady state 1
Continuous Drain Current (TJ = 150 °C) ID 5.5 A TA = 70 °C; t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C) ID 3.5 A TA = 70 °C; steady state 1
Pulsed Drain Current IDM 30 A 1
Continuous Source Current (Diode Conduction) IS 1.5 A t ≤ 10 s 1
Continuous Source Current (Diode Conduction) IS 1 A steady state 1
Maximum Power Dissipation PD 1.5 W TA = 25 °C; t ≤ 10 s 1
Maximum Power Dissipation PD 1 W TA = 25 °C; steady state 1
Maximum Power Dissipation PD 0.96 W TA = 70 °C; t ≤ 10 s 1
Maximum Power Dissipation PD 0.64 W TA = 70 °C; steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 72 83 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 100 120 °C/W steady state 1
Maximum Junction-to-Foot (Drain) RthJF 55 70 °C/W steady state 1
Gate Threshold Voltage VGS(th) 0.5 1 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -200 200 nA VDS = 0 V, VGS = ± 4.5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 25 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 25 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 30 A VDS ≤ 5 V, VGS = 4.5 V 2
Diode Forward Voltage VSD 0.71 1.2 V IS = 1.5 A, VGS = 0 V 2
Total Gate Charge Qg 12 18 nC VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2
Turn-On Delay Time td(on) 245 365 ns VDD = 10 V, RL = 10 Ω; ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2
Rise Time tr 330 495 ns VDD = 10 V, RL = 10 Ω; ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2
Turn-Off Delay Time td(off) 860 1300 ns VDD = 10 V, RL = 10 Ω; ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2
Fall Time tf 510 765 ns VDD = 10 V, RL = 10 Ω; ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2

CAD (KiCad official)

  • Symbol: VBZC8205A
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: vbzc8205a-etched.step / vbzc8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbzc8205a.step / vbzc8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 ba823c4895a965a2, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF