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VBZA9945

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBZA9945

VBsemi Elec · MOSFETs · SO-8

VBZA9945 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (G1/D1 pair); the datasheet gives continuous source diode current IS of 3.6 A and pulsed drain current IDM of 50 A for the device.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage is limited to ±20 V.
3 S2 passive Source of N-channel MOSFET 2 (G2/D2 pair); the datasheet gives continuous source diode current IS of 3.6 A and pulsed drain current IDM of 50 A for the device.
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage is limited to ±20 V.
5 D2 passive Drain of N-channel MOSFET 2; drain-source voltage is rated 60 V with continuous drain current of 8 A per leg at TC = 25 °C.
6 D2 passive Drain of N-channel MOSFET 2 (internally common with pin 5); drain-source voltage is rated 60 V with continuous drain current of 8 A per leg at TC = 25 °C.
7 D1 passive Drain of N-channel MOSFET 1; drain-source voltage is rated 60 V with continuous drain current of 8 A per leg at TC = 25 °C.
8 D1 passive Drain of N-channel MOSFET 1 (internally common with pin 7); drain-source voltage is rated 60 V with continuous drain current of 8 A per leg at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8 A TC = 25 °C 1
Continuous Drain Current ID 4 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 3.6 A 1
Pulsed Drain Current IDM 50 A 1
Single Pulse Avalanche Current IAS 18 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 16.2 mJ 1
Maximum Power Dissipation PD 4 W TC = 25 °C 1
Maximum Power Dissipation PD 1.3 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 110 °C/W PCB mount, mounted on 1 in square PCB (FR4 material) 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 34 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.5 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 20 A VGS = 10 V, VDS ≥ 5 V 2
Input Capacitance Ciss 600 750 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 110 140 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 50 62 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate Resistance Rg 1.3 6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 7 11 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 3.3 5 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 22.4 33.5 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 2.1 3.2 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Current ISM 28 A 2
Forward Voltage VSD 0.75 1.1 V IF = 2 A, VGS = 0 V 2
Drain-Source On-State Resistance RDS(on) 0.027 Ω VGS = 10 V, ID = 4.5 A 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = 10 V, ID = 4.5 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.081 Ω VGS = 10 V, ID = 4.5 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.041 Ω VGS = 4.5 V, ID = 4 A 2
Forward Transconductance gfs 15 S VDS = 15 V, ID = 4.5 A 2
Total Gate Charge Qg 18 nC VGS = 10 V, VDS = 30 V, ID = 5.3 A 2
Gate-Source Charge Qgs 2.7 nC VGS = 10 V, VDS = 30 V, ID = 5.3 A 2
Gate-Drain Charge Qgd 4.2 nC VGS = 10 V, VDS = 30 V, ID = 5.3 A 2

CAD (KiCad official)

  • Symbol: VBZA9945
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vbza9945-etched.step / vbza9945-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbza9945.step / vbza9945.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 e6db5b8f774788a0, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF