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VBZA9926A

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBZA9926A

VBsemi Elec · MOSFETs · SO-8

VBZA9926A from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; continuous source current (diode conduction) is rated at IS 1.7 A.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage is rated at VGS ±12 V.
3 S2 passive Source of N-channel MOSFET 2; continuous source current (diode conduction) is rated at IS 1.7 A.
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage is rated at VGS ±12 V.
5 D2 passive Drain of N-channel MOSFET 2; drain-source voltage is rated at VDS 20 V.
6 D2 passive Drain of N-channel MOSFET 2; drain-source voltage is rated at VDS 20 V.
7 D1 passive Drain of N-channel MOSFET 1; drain-source voltage is rated at VDS 20 V.
8 D1 passive Drain of N-channel MOSFET 1; drain-source voltage is rated at VDS 20 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 5.8 A TA = 25 °C, TJ = 150 °C 1
Pulsed Drain Current IDM 40 A 10 µs pulse width 1
Continuous Source Current (Diode Conduction) IS 1.7 A 1
Maximum Power Dissipation PD 2 W TA = 25 °C 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 62.5 °C/W Surface mounted on FR4 board, t ≤ 10 s 1
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
Gate Threshold Voltage VGS(th) 0.6 1.5 V VDS = VGS, ID = 250 µA 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 10 V, ID = 6.0 A 2
Drain-Source On-State Resistance RDS(on) 0.023 Ω VGS = 4.5 V, ID = 5.0 A 2
Diode Forward Voltage VSD 1.2 V IS = 1.7 A, VGS = 0 V 2
Gate Resistance Rg 1.6 2.7 Ω f = 1 MHz 2
Forward Transconductance gfs 27 S VDS = 10 V, ID = 7.1 A 2
Total Gate Charge Qg 9.5 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate-Source Charge Qgs 1.5 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate-Drain Charge Qgd 2.5 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Turn-On Delay Time td(on) 10 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Rise Time tr 15 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Turn-Off Delay Time td(off) 38 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Fall Time tf 25 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Source-Drain Reverse Recovery Time trr 26 ns IF = 1.7 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: VBZA9926A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vbza9926a-etched.step / vbza9926a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbza9926a.step / vbza9926a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 b271631150efc4f4, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF