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verification.json Verified: Published by the parts factory: tier lcsc, 9 pins · Ray 7d ago

VBQA2104N

VBsemi Elec · MOSFETs · DFN5x6-8

VBQA2104N from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pin 1 is marked by the dot/PIN1 indicator.
2 S passive Source of the P-channel MOSFET.
3 S passive Source of the P-channel MOSFET.
4 G input Gate of the P-channel MOSFET; VGS rated ±20 V maximum.
5 D passive Drain of the P-channel MOSFET; VDS rated -100 V.
6 D passive Drain of the P-channel MOSFET; VDS rated -100 V.
7 D passive Drain of the P-channel MOSFET; VDS rated -100 V.
8 D passive Drain of the P-channel MOSFET; VDS rated -100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -100 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.8 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -120 A VDS = - 5 V, VGS = - 10 V 2
Total Gate Charge Qg 76 115 nC VDS = - 30 V, VGS = - 10 V, ID = - 5 A 2
Total Gate Charge Qg 38 60 nC VDS = - 30 V, VGS = - 4.5 V, ID = - 5 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = - 2 V, RL = 2 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns VDD = - 2 V, RL = 2 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns VDD = - 2 V, RL = 2 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns VDD = - 2 V, RL = 2 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD -1 -1.5 V IS = - 3 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = - 5 A, di/dt = 10 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = - 5 A, di/dt = 10 A/µs, TJ = 25 °C 2
Continuous Source-Drain Diode Current IS 6.9 A TC = 25 °C 2
Drain-Source Voltage VDS -100 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Single Pulse Avalanche Energy EAS 10.1 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 10.4 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 33 40 °C/W Steady State, surface mounted on 1" x 1" FR4 board 1
Junction-to-Case Thermal Resistance RthJC 0.98 1.2 °C/W Steady State 1
Drain-Source On-State Resistance RDS(on) 0.036 Ω VGS = - 4.5 V 1
Forward Transconductance gfs 20 S VDS = - 15 V, ID = - 5 A 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 mV/°C ID = - 250 µA 2
Gate Resistance Rg 5.2 Ω f = 1 MHz 2

CAD (KiCad official)

  • Symbol: VBQA2104N
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: vbqa2104n-etched.step / vbqa2104n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbqa2104n.step / vbqa2104n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 666c372e9dcf3265, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF