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VBMB1203M

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsvbmb1203mfactory-2.0.0extractor-text

Verified VBMB1203M

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: VBMB1203M · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-6hff7mdh/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ vbmb1203m.kicad_sym✓ vbmb1203m.kicad_mod✓ vbmb1203m.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers vbmb1203m: viewers · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago
vbmb1203m-hero.glb Publish 0.1.0 · Ray 3h ago
vbmb1203m-hero.overlay.json Publish 0.1.0 · Ray 3h ago
vbmb1203m.glb Publish 0.1.0 · Ray 3h ago
vbmb1203m.kicad_mod Publish 0.1.0 · Ray 3h ago
vbmb1203m.kicad_sym Publish 0.1.0 · Ray 3h ago
vbmb1203m.lbr Publish 0.1.0 · Ray 3h ago
vbmb1203m.step Publish 0.1.0 · Ray 3h ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 3h ago

VBMB1203M

VBsemi Elec · MOSFETs · TO-220F

VBMB1203M from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold 2.0 to 4.0 V at ID = 250 µA.
2 D passive Drain; drain-source voltage up to 200 V, continuous current 10 A at TC = 25 °C (6.5 A at 100 °C).
3 S passive Source; connects to the body diode anode and carries the return current, with 10 A continuous at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 10 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 6.5 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 32 A Note a: repetitive rating; pulse width limited by maximum junction temperature 1
Linear Derating Factor 0.24 W/°C 1
Single Pulse Avalanche Energy EAS 36 mJ Note b: VDD = 25 V, starting TJ = 25 °C, L = 1.0 mH, RG = 25 Ω, IAS = 7.2 A 1
Repetitive Avalanche Current IAR 7.2 A Note a: repetitive rating 1
Repetitive Avalanche Energy EAR 3.7 mJ Note a: repetitive rating 1
Maximum Power Dissipation PD 37 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Note c: ISD ≤ 9.2 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 175 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) for 10 s 300 °C Note d: 1.6 mm from case 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 4.1 °C/W 2
Drain-Source Breakdown Voltage VDS 200 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 160 V, VGS = 0 V, TJ = 150 °C 2
Drain-Source On-State Resistance RDS(on) 0.265 Ω VGS = 10 V, ID = 4.3 A; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Forward Transconductance gfs 2.3 S VDS = 50 V, ID = 4.3 A; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Total Gate Charge Qg 16 nC VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b 2
Gate-Source Charge Qgs 4.4 nC VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b 2
Gate-Drain Charge Qgd 7.7 nC VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b 2
Continuous Source-Drain Diode Current IS 10 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 32 A Note a: repetitive rating 2
Body Diode Voltage VSD 2.5 V TJ = 25 °C, IS = 7.2 A, VGS = 0 V; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Body Diode Reverse Recovery Time trr 130 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Body Diode Reverse Recovery Charge Qrr 0.65 1.3 µC TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 % 2

CAD (KiCad official)

  • Symbol: VBMB1203M
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 7818dbace4802780, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF