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vbmb1203m: factory component page (tier=lcsc)

Ray ·e0bd3f9001 ·7h ago ·parent 7519867
1 file changed +438−26
page.json+438−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "vbmb1203m",+  "title": "VBMB1203M",+  "brief": "VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "vbmb1203m.kicad_sym",-    "vbmb1203m.kicad_mod",-    "vbmb1203m.glb",-    "vbmb1203m.step",-    "vbmb1203m.lbr",-    "docs/hero.png",-    "docs/vbmb1203m-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "vbmb1203m-hero.glb",-    "vbmb1203m-hero.overlay.json"-  ],   "component": {     "mpn": "VBMB1203M",     "manufacturer": "VBsemi Elec",@@ -138,10 +121,439 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "VBsemi Elec",+      "Package": "TO-220F",+      "Category": "Transistors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "7818dbace48027805a0877398f3208bed78a34dcbf07b72f724e16931db41e15",+      "rows": [+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "VGS at 10 V, TC = 25 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 6.5,+          "conditions": "VGS at 10 V, TC = 100 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 32,+          "conditions": "Note a: repetitive rating; pulse width limited by maximum junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Linear Derating Factor",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "W/°C",+          "min": null,+          "typ": null,+          "max": 0.24,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single Pulse Avalanche Energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 36,+          "conditions": "Note b: VDD = 25 V, starting TJ = 25 °C, L = 1.0 mH, RG = 25 Ω, IAS = 7.2 A",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Repetitive Avalanche Current",+          "symbol": "IAR",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7.2,+          "conditions": "Note a: repetitive rating",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Repetitive Avalanche Energy",+          "symbol": "EAR",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 3.7,+          "conditions": "Note a: repetitive rating",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 37,+          "conditions": "TC = 25 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Peak Diode Recovery dV/dt",+          "symbol": "dV/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 5.5,+          "conditions": "Note c: ISD ≤ 9.2 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 175 °C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Soldering Recommendations (Peak Temperature) for 10 s",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "Note d: 1.6 mm from case",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Mounting Torque",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "lbf·in",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "6-32 or M3 screw",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Mounting Torque",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "N·m",+          "min": null,+          "typ": null,+          "max": 1.1,+          "conditions": "6-32 or M3 screw",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Junction-to-Ambient",+          "symbol": "RthJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 65,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Maximum Junction-to-Case (Drain)",+          "symbol": "RthJC",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 4.1,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "VDS",+          "kind": "electrical",+          "unit": "V",+          "min": 200,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0 V, ID = 250 µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VDS = VGS, ID = 250 µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS = ± 20 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 25,+          "conditions": "VDS = 200 V, VGS = 0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 250,+          "conditions": "VDS = 160 V, VGS = 0 V, TJ = 150 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": null,+          "max": 0.265,+          "conditions": "VGS = 10 V, ID = 4.3 A; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 %",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance",+          "symbol": "gfs",+          "kind": "electrical",+          "unit": "S",+          "min": 2.3,+          "typ": null,+          "max": null,+          "conditions": "VDS = 50 V, ID = 4.3 A; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 %",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total Gate Charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": null,+          "max": 16,+          "conditions": "VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Charge",+          "symbol": "Qgs",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": null,+          "max": 4.4,+          "conditions": "VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Drain Charge",+          "symbol": "Qgd",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": null,+          "max": 7.7,+          "conditions": "VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Continuous Source-Drain Diode Current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "MOSFET symbol showing the integral reverse p-n junction diode",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Diode Forward Current",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 32,+          "conditions": "Note a: repetitive rating",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Body Diode Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 2.5,+          "conditions": "TJ = 25 °C, IS = 7.2 A, VGS = 0 V; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 %",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Body Diode Reverse Recovery Time",+          "symbol": "trr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 130,+          "max": 260,+          "conditions": "TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 %",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Body Diode Reverse Recovery Charge",+          "symbol": "Qrr",+          "kind": "electrical",+          "unit": "µC",+          "min": null,+          "typ": 0.65,+          "max": 1.3,+          "conditions": "TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs; Note b: pulse width ≤ 300 µs, duty cycle ≤ 2 %",+          "source_page": 2,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "vbmb1203m"+  ],+  "discovery_pitch": "VBMB1203M (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "vbmb1203m.kicad_sym",+    "vbmb1203m.kicad_mod",+    "vbmb1203m.glb",+    "vbmb1203m.step",+    "vbmb1203m.lbr",+    "docs/hero.png",+    "docs/vbmb1203m-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "vbmb1203m-hero.glb",+    "vbmb1203m-hero.overlay.json"+  ]+}