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VBMB1105

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBMB1105

VBsemi Elec · MOSFETs · TO-220F

VBMB1105 from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V per the absolute maximum ratings.
2 D passive Drain terminal of the N-channel MOSFET; continuous drain current is rated at 120 A at TC = 25 °C with 100 V drain-source voltage.
3 S passive Source terminal of the N-channel MOSFET; continuous source (diode conduction) current is rated at 120 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 120 A TC = 25 °C 1
Continuous Drain Current ID 102 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 120 A 1
Pulsed Drain Current IDM 480 A 1
Single Pulse Avalanche Current IAS 73 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 266 mJ 1
Maximum Power Dissipation PD 84 W TC = 25 °C 1
Maximum Power Dissipation PD 35 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient PCB Mount RthJA 40 °C/W 1
Junction-to-Case (Drain) RthJC 0.6 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2.5 3 3.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V VDS = 100 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V VDS = 100 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 500 μA VGS = 0 V VDS = 100 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VGS = 10 V VDS5 V 2
Drain-Source On-State Resistance RDS(on) 0.0038 Ω VGS = 10 V ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.0064 Ω VGS = 10 V ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.008 Ω VGS = 10 V ID = 20 A, TJ = 175 °C 2
Input Capacitance Ciss 5780 7230 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 3070 3840 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 305 385 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Total Gate Charge Qg 125 190 nC VGS = 10 V VDS = 50 V, ID = 70 A 2
Gate Resistance Rg 1.6 3.3 5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 16 25 ns VDD = 50 V, RL = 0.7, ID 70 A, VGEN = 10 V, Rg = 1 2
Rise Time tr 110 165 ns 2
Turn-Off Delay Time td(off) 40 60 ns 2
Fall Time tf 12 20 ns 2
Pulsed Current ISM 480 A 2
Forward Voltage VSD 0.9 1.5 V IF = 100 A, VGS = 0 2

CAD (KiCad official)

  • Symbol: VBMB1105
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 fbf661207160b48e, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF