component

VBM2658

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsvbm2658factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 6h ago
viewers vbm2658: viewers · Ray 6h ago
package.json Publish 0.1.0 · Ray 6h ago
page.json Set visibility: public · Ray 6h ago
README.md Publish 0.1.0 · Ray 6h ago
vbm2658-etched.glb Publish 0.1.0 · Ray 6h ago
vbm2658-etched.step vbm2658: factory component page (tier=lcsc) · Ray 6h ago
vbm2658-hero.glb vbm2658: hero GLB from the etched model (keeps the MPN mark) · Ray 6h ago
vbm2658-hero.overlay.json Publish 0.1.0 · Ray 6h ago
vbm2658.glb Publish 0.1.0 · Ray 6h ago
vbm2658.kicad_mod Publish 0.1.0 · Ray 6h ago
vbm2658.kicad_sym Publish 0.1.0 · Ray 6h ago
vbm2658.lbr Publish 0.1.0 · Ray 6h ago
vbm2658.step Publish 0.1.0 · Ray 6h ago

VBM2658

VBsemi Elec · MOSFETs · TO-220AB

VBM2658 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of -1.0 to -3.0 V.
2 D passive Drain, connected to the tab, rated for VDS of -60 V and continuous drain current of -45 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET, with a body diode continuous current of -40 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID -45 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -39 A TC = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -100 A t = 300 µs 1
Avalanche Current IAS -32 A 1
Single Avalanche Energy EAS 51 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 41.7 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 60 °C/W 1
Junction-to-Case (Drain) RthJC 3 °C/W 1
Drain-Source Breakdown Voltage VDS -60 V VDS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = - 60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -30 A VDS ≤ - 10 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.048 Ω VGS = - 10 V, ID = - 14 A 2
Drain-Source On-State Resistance RDS(on) 0.056 Ω VGS = - 4.5 V, ID = - 12 A 2
Forward Transconductance gfs 40 S VDS = - 20 V, ID = - 14 A 2
Input Capacitance Ciss 2065 pF VGS = 0 V, VDS = - 30 V, f = 1 MHz 2
Output Capacitance Coss 330 pF VGS = 0 V, VDS = - 30 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 280 pF VGS = 0 V, VDS = - 30 V, f = 1 MHz 2
Total Gate Charge Qg 67 100 nC VDS = - 30 V, VGS = - 10 V, ID = - 14 A 2
Gate-Source Charge Qgs 13.5 nC VDS = - 30 V, VGS = - 10 V, ID = - 14 A 2
Gate-Drain Charge Qgd 14 nC VDS = - 30 V, VGS = - 10 V, ID = - 14 A 2
Gate Resistance Rg 0.5 2.5 5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 10 20 ns VDD = - 30 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 11 20 ns VDD = - 30 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 42 63 ns VDD = - 30 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 12 20 ns VDD = - 30 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Body Diode Continuous Current IS -40 A TC = 25 °C 2
Body Diode Pulsed Current ISM -100 A TC = 25 °C 2
Forward Voltage VSD -0.8 -1.5 V IF = - 10 A, VGS = 0 V 2
Reverse Recovery Time trr 38 57 ns IF = - 10 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.3 3.5 A IF = - 10 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 40 60 nC IF = - 10 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: VBM2658
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: vbm2658-etched.step / vbm2658-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbm2658.step / vbm2658.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 c9e40ce7eeb6d548, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF