# VBM1680

**VBsemi Elec** · MOSFETs · TO-220AB

VBM1680 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit ±20 V, threshold 1.0 to 3.0 V at VDS = VGS, ID = 250 μA. |
| 2 | D | passive | Drain (also the case/tab, RthJC 2.5 °C/W max); VDS 60 V, continuous ID 20 A at TC = 25 °C, pulsed IDM 68 A. |
| 3 | S | passive | Source; RDS(on) 0.072 Ω at VGS = 10 V, ID = 10 A, with body diode continuous/pulsed current ISM 68 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 25 | μA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (hot) | IDSS |  |  | 250 | μA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 |
| Forward Transconductance | gfs | 5.5 |  |  | S | VDS = 25 V, ID = 10 A | 2 |
| Total Gate Charge | Qg |  |  | 25 | nC | VGS = 10 V, ID = 17 A, VDS = 48 V | 2 |
| Gate-Source Charge | Qgs |  |  | 5.8 | nC | VGS = 10 V, ID = 17 A, VDS = 48 V | 2 |
| Gate-Drain Charge | Qgd |  |  | 11 | nC | VGS = 10 V, ID = 17 A, VDS = 48 V | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 68 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 1.5 | V | TJ = 25 °C, IS = 17 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 88 | 180 | ns | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 0.29 | 0.64 | μC | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 20 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 12 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 68 | A | TC = 25 °C | 1 |
| Linear Derating Factor |  |  |  | 0.4 | W/°C |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 100 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25, IAS = 17 A | 1 |
| Maximum Power Dissipation | PD |  |  | 60 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 4.5 | V/ns | ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering Recommendations (Peak temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 2.5 | °C/W |  | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 0.061 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.072 |  | Ω | VGS = 10 V, ID = 10 A | 2 |
| Input Capacitance | Ciss |  | 640 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 360 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 79 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 13 |  | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 |
| Rise Time | tr |  | 58 |  | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 |
| Turn-Off Delay Time | td(off) |  | 25 |  | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 |
| Fall Time | tf |  | 42 |  | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `VBM1680`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `vbm1680-etched.step` / `vbm1680-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbm1680.step` / `vbm1680.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/vbm1680-datasheet.pdf) (8 pp, sha256 `40dcae07d4dba816`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbm1680-datasheet.pdf)