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VBM15R08

Public Made by Adom

by adom

VBsemi Elec MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBM15R08

VBsemi Elec · MOSFETs · ITO-220AB-3

VBM15R08 from VBsemi Elec, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2.0 to 4.0 V at ID = 250 μA.
2 D passive Drain, connected to the mounting tab; drain-source voltage rated 500 V and continuous current 8.0 A at TC = 25 °C.
3 S passive Source; body diode continuous source current IS is 9.2 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 500 V 1
Continuous Drain Current ID 8 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 5.8 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 37 A 1
Linear Derating Factor 1.3 W/°C 1
Single Pulse Avalanche Energy EAS 290 mJ Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 Ω, IAS = 9.2 A 1
Repetitive Avalanche Current IAR 9.2 A 1
Repetitive Avalanche Energy EAR 17 mJ 1
Maximum Power Dissipation PD 170 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C for 10 s, 1.6 mm from case 1
Drain-Source Breakdown Voltage VDS 500 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 5.5 S VDS = 50 V, ID = 5.5 A 2
Gate Input Resistance Rg 0.5 3.2 Ω f = 1 MHz, open drain 2
Total Gate Charge Qg 49 nC VGS = 10 V, ID = 8.0 A, VDS = 400 V 2
Gate-Source Charge Qgs 13 nC 2
Gate-Drain Charge Qgd 20 nC 2
Continuous Source-Drain Diode Current IS 9.2 A 2
Pulsed Diode Forward Current ISM 37 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 9.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 530 800 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 3 4.4 μC 2
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.75 °C/W 2

CAD (KiCad official)

  • Symbol: VBM15R08
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 25c0a9620d6b1d4d, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF