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VBK1230N

VBsemi Elec · Pre-ordered transistors · SOT-323-3

VBK1230N from VBsemi Elec, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±8 V, with VGS(th) specified at VDS = VGS, ID = 250 µA.
2 S passive Source; continuous source-drain diode current is rated in the absolute maximum ratings and body diode VSD is 0.75 V typ, 1.2 V max at IS = 1 A.
3 D passive Drain; drain-source voltage rated at 20 V, with RDS(on) of 0.210 Ω at VGS = 4.5 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-323-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Junction-to-Ambient Thermal Resistance RthJA 80 100 °C/W t ≤ 5 s, surface mounted on 1" x 1" FR4 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 40 60 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.45 1.2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (hot) IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 2
Gate Resistance Rg 0.5 2.4 4.8 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 5 V, Rg = 1 Ω 2
Rise Time tr 17 26 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 31 47 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 21 32 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 6 12 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.75 1.2 V IS = 1 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 12 20 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.21 Ω VGS = 4.5 V 1
Drain-Source On-State Resistance RDS(on) 0.26 Ω VGS = 2.5 V 1
Drain-Source On-State Resistance RDS(on) 0.35 Ω VGS = 1.8 V 1
VDS Temperature Coefficient ΔVDS/TJ 25 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -2.6 mV/°C ID = 250 µA 2
Forward Transconductance gfs 24 S VDS = 10 V, ID = 1.0 A 2
Output Capacitance Coss 105 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: VBK1230N
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: vbk1230n-etched.step / vbk1230n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbk1230n.step / vbk1230n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 baa4d6bc6ecd7490, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF