component
VBGQA1805
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBGQA1805
VBsemi Elec · MOSFETs · DFN5x6-8
VBGQA1805 from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 marked by a dot; continuous source current (diode conduction) is rated 80 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shorted to the other source pins; continuous source current (diode conduction) is rated 80 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shorted to the other source pins; continuous source current (diode conduction) is rated 80 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS of 85 V and a pulsed drain current of 240 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS of 85 V and a pulsed drain current of 240 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS of 85 V and a pulsed drain current of 240 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for VDS of 85 V and a pulsed drain current of 240 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 85 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current (125 °C) | IDSS | 50 | µA | VDS = 30V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current (150 °C) | IDSS | 250 | µA | VDS = 30V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance (4.5 V) | RDS(on) | 0.012 | Ω | VGS = 4.5 V, ID = 46 A | 2 | ||
| Forward Transconductance | gfs | 60 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Pulsed Source Current | ISM | 240 | A | TC = 25 °C | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 64 | A | TC = 100 °C, TJ = 150 °C, package limited | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 80 | A | package limited | 1 | ||
| Avalanche Current | IAS | 70 | A | L = 0.1 mH | 1 | ||
| Single Avalanche Energy | EAS | 133 | mJ | L = 0.1 mH, Duty Cycle ≤ 1 % | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient, t ≤ 10 s | RthJA | 15 | 18 | °C/W | t ≤ 10 sec | 1 | |
| Junction-to-Ambient, Steady State | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Input Capacitance | Ciss | 4200 | pF | VGS = 0 V, VDS = 85 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 470 | pF | VGS = 0 V, VDS = 85 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 225 | pF | VGS = 0 V, VDS = 85 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 16 | nC | VDS = 85 V, VGS = 10 V, ID = 50 A | 2 | ||
| Gate-Drain Charge | Qgd | 19 | nC | VDS = 85 V, VGS = 10 V, ID = 50 A | 2 |
CAD (KiCad official)
- Symbol:
VBGQA1805 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
vbgqa1805-etched.step/vbgqa1805-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbgqa1805.step/vbgqa1805.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
7b6f910edf48150d, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).