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VBFB1104N

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBFB1104N

VBsemi Elec · MOSFETs · TO-251

VBFB1104N from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGS is limited to ±20 V.
2 D passive Drain terminal; drain-source voltage VDS is rated 100 V, and the drain is also the case for the junction-to-case (drain) thermal rating.
3 S passive Source terminal; continuous source current (diode conduction) IS is rated 23 A, and pulsed source-drain diode current ISM is 5 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 110 A 1
Continuous Source Current (Diode Conduction) IS 23 A 1
Avalanche Current IAS 3 A 1
Single Pulse Avalanche Energy EAS 18 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 96 W TC = 25 °C 1
Operating Junction and Storage Temperature Range Tstg -55 175 °C 1
Junction-to-Ambient RthJA 15 18 °C/W t 10 s 1
Junction-to-Ambient Steady State RthJA 40 50 °C/W Steady State 1
Junction-to-Case (Drain) RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 80 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 80 V, VGS = 0 V, TJ = 175 °C 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2
Turn-On Delay Time td(on) 15 25 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 50 75 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 60 90 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2

CAD (KiCad official)

  • Symbol: VBFB1104N
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: vbfb1104n-etched.step / vbfb1104n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbfb1104n.step / vbfb1104n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 e300cf168720d696, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF