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VBE2625
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownVBE2625
VBsemi Elec · MOSFETs · TO-252
VBE2625 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with a gate threshold of -1.5 V to -3 V at ID = -250 µA. |
| 2 | D | passive | Drain (center lead, connected to the mounting tab) of the P-channel MOSFET, rated for VDS of -60 V and continuous ID of -50 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous body-diode current IS of -40 A and pulsed ISM of -80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -50 | A | TC = 25 °C (TJ = 175 °C) | 1 | ||
| Continuous Drain Current | ID | -40 | A | TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | -160 | A | 1 | |||
| Avalanche Current | IAS | -50 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | L = 0.1 mH | 1 | ||
| Power Dissipation | PD | 113 | W | TC = 25 °C | 1 | ||
| Power Dissipation | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (t ≤ 10 s) | RthJA | 15 | 18 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance (steady state) | RthJA | 40 | 50 | °C/W | Steady state | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 0.82 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.5 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | VDS = -60 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | -50 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.02 | Ω | VGS = -10 V, ID = -17 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = -10 V, ID = -40 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.035 | Ω | VGS = -10 V, ID = -40 A, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.025 | Ω | VGS = -4.5 V, ID = -14 A | 2 | ||
| Forward Transconductance | gfs | 61 | S | VDS = -15 V, ID = -17 A | 2 | ||
| Total Gate Charge | Qg | 110 | 165 | nC | VDS = -30 V, VGS = -10 V, ID = -40 A | 2 | |
| Turn-On Delay Time | td(on) | 15 | 23 | ns | VDD = -30 V, RL = 0.6 Ω, ID ≅ -40 A, VGEN = -10 V, RG = 6 Ω | 2 | |
| Rise Time | tr | 70 | 105 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 175 | 260 | ns | 2 | ||
| Fall Time | tf | 175 | 260 | ns | 2 | ||
| Continuous Source-Drain Current | IS | -40 | A | TC = 25 °C | 2 | ||
| Pulsed Source-Drain Current | ISM | -80 | A | 2 | |||
| Forward Voltage | VSD | -1 | -1.6 | V | IF = -40 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 45 | 70 | ns | IF = -40 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
VBE2625 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vbe2625-etched.step/vbe2625-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbe2625.step/vbe2625.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
0138ad6d1f7be807, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).