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Contents

README

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VBE2104N

VBsemi Elec · MOSFETs · TO-252

VBE2104N from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V (VGS).
2 D passive Drain terminal, electrically connected to the tab; rated for VDS of -100 V and continuous drain current of -40 A at TC = 25 °C (-22 A at TC = 125 °C).
3 S passive Source terminal; continuous source (body diode) current is rated at -50 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -40 A TC = 25 °C 1
Continuous Drain Current ID -22 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS -50 A 1
Pulsed Drain Current IDM -150 A 1
Single Pulse Avalanche Current IAS -44 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 96 mJ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 50 °C/W PCB mount, mounted on 1" square PCB (FR-4 material) 1
Junction-to-Case (Drain) RthJC 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS -100 V VGS = 0 V, ID = - 250 μA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = - 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS = 0 V, VDS = - 100 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = - 100 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 μA VGS = 0 V, VDS = - 100 V, TJ = 175 °C 2
On-State Drain Current ID(on) -30 A VGS = - 10 V, VDS - 5 V 2
Total Gate Charge Qg 96 144 nC VGS = - 10 V, VDS = - 50 V, ID = - 9.2 A 2
Gate Resistance Rg 1.5 3.13 4.7 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 17 ns VDD = - 50 V, RL = 6.49, ID - 7.7 A, VGEN = - 10 V, Rg = 1.0 2
Rise Time tr 17 ns VDD = - 50 V, RL = 6.49, ID - 7.7 A, VGEN = - 10 V, Rg = 1.0 2
Turn-Off Delay Time td(off) 78 117 ns VDD = - 50 V, RL = 6.49, ID - 7.7 A, VGEN = - 10 V, Rg = 1.0 2
Fall Time tf 23 ns VDD = - 50 V, RL = 6.49, ID - 7.7 A, VGEN = - 10 V, Rg = 1.0 2
Pulsed Current ISM -150 A 2
Forward Voltage VSD 0.8 1.5 V IF = - 7.7 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: VBE2104N
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: vbe2104n-etched.step / vbe2104n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbe2104n.step / vbe2104n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 a2d6bc739143654c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF