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VBE1252M

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsvbe1252mfactory-2.0.0extractor-text

Verified VBE1252M

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: VBE1252M · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-e3lkduhw/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ vbe1252m.kicad_sym✓ vbe1252m.kicad_mod✓ vbe1252m.step
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VBE1252M

VBsemi Elec · MOSFETs · TO-252

VBE1252M from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, rated for a gate-source voltage of ±20 V, with an internal gate input resistance Rg of 0.3 to 1.2 Ω.
2 D passive Drain, rated for 250 V drain-source voltage and electrically connected to the tab, with junction-to-case thermal resistance RthJC of 1.0 °C/W maximum.
3 S passive Source, the return path for drain current, with continuous source-drain diode current IS rated at 14 A and internal source inductance LS of 7.5 nH.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 250 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 17 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 11 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 56 A Repetitive rating; pulse width limited by maximum junction temperature (note a) 1
Single Pulse Avalanche Energy EAS 550 mJ VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 Ω, IAS = 14 A (note b) 1
Repetitive Avalanche Current IAR 17 A Repetitive rating (note a) 1
Repetitive Avalanche Energy EAR 13 mJ Repetitive rating (note a) 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Linear Derating Factor 1 W/°C 1
Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Note c: ISD ≤ 14 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C for 10 s, 1.6 mm from case (note d) 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W Case-to-sink, flat, greased surface 2
Drain-Source Breakdown Voltage VDS 250 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 250 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.176 Ω VGS = 10 V, ID = 8.4 A (note b) 2
Forward Transconductance gfs 6.7 S VDS = 50 V, ID = 8.4 A (note b) 2
Gate Input Resistance Rg 0.3 1.2 Ω f = 1 MHz, open drain 2
Total Gate Charge Qg 68 nC VGS = 10 V, ID = 7.9 A, VDS = 200 V, see fig. 6 and 13 (note b) 2
Gate-Source Charge Qgs 11 nC VGS = 10 V, ID = 7.9 A, VDS = 200 V 2
Gate-Drain Charge Qgd 35 nC VGS = 10 V, ID = 7.9 A, VDS = 200 V 2
Continuous Source-Drain Diode Current IS 14 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 56 A Note a 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 14 A, VGS = 0 V (note b) 2
Body Diode Reverse Recovery Time trr 250 500 ns TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs (note b) 2
Body Diode Reverse Recovery Charge Qrr 2.3 4.6 μC 2
Input Capacitance Ciss 1300 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 2
Output Capacitance Coss 330 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 2
Reverse Transfer Capacitance Crss 85 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 2
VDS Temperature Coefficient VDS/TJ 0.34 V/°C Reference to 25 °C, ID = 1 mA 2
Turn-On Delay Time td(on) 11 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω, see fig. 10b 2
Rise Time tr 24 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω, see fig. 10b 2
Turn-Off Delay Time td(off) 53 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω, see fig. 10b 2
Fall Time tf 49 ns VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 8.7 Ω, see fig. 10b 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH 2

CAD (KiCad official)

  • Symbol: VBE1252M
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: vbe1252m-etched.step / vbe1252m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbe1252m.step / vbe1252m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 d8b6377119efc413, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF