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Contents

README

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VBE1206

VBsemi Elec · MOSFETs · TO-252

VBE1206 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage rating of 15 V (VGS).
2 D passive Drain terminal, connected to the tab, rated for 20 V drain-source voltage and 100 A continuous drain current at TC = 25°C (package limited).
3 S passive Source terminal, with a continuous source (diode conduction) current rating of 65 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 250 A 2
Gate Threshold Voltage VGS(th) 0.5 V VDS = VGS, ID = 250 A 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = 12 V 2
Zero Gate Voltage Drain Current IDSS 1 A VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current at TJ=125C IDSS 50 A VDS = 20 V, VGS = 0 V, TJ = 125C 2
On-State Drain Current ID(on) 100 A VDS = 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance rDS(on) 0.0045 Ω VGS = 4.5 V, ID = 20 A 2
Drain-Source On-State Resistance at TJ=125C rDS(on) 0.0055 Ω VGS = 4.5 V, ID = 20 A, TJ = 125C 2
Drain-Source On-State Resistance rDS(on) 0.006 Ω VGS = 2.5 V, ID = 20 A 2
Forward Transconductance gfs 20 S VDS = 5 V, ID = 40 A 2
Total Gate Charge Qg 26 35 nC VDS = 10 V, VGS = 4.5 V, ID = 40 A 2
Gate Resistance Rg 1 3.7 Ω 2
Turn-On Delay Time td(on) 20 35 ns 2
Rise Time tr 120 190 ns VDD = 10 V, RL = 0.25 2
Turn-Off Delay Time td(off) 45 70 ns VDD = 10 V, RL = 0.25, ID 40 A, VGEN = 4.5 V, RG = 2.5 2
Fall Time tf 20 35 ns 2
Pulsed Current ISM 100 A 2
Diode Forward Voltage VSD 1.2 1.5 V IF = 100 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 35 70 ns IF = 40 A, di/dt = 100 A/s 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS 15 V 1
Continuous Drain Current ID 100 A TC = 25C 1
Continuous Drain Current ID 80 A TC = 100C 1
Pulsed Drain Current IDM 200 A 1
Continuous Source Current (Diode Conduction) IS 65 A 1
Maximum Power Dissipation PD 71 W TC = 25C 1
Maximum Power Dissipation PD 8.3 W TA = 25C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 C 1
Maximum Junction-to-Ambient RthJA 15 18 C/W t 10 sec; surface mounted on 1 x 1 FR4 board 1
Maximum Junction-to-Ambient, Steady State RthJA 40 50 C/W Steady State; surface mounted on 1 x 1 FR4 board 1
Maximum Junction-to-Case RthJC 1.75 2.1 C/W 1

CAD (KiCad official)

  • Symbol: VBE1206
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: vbe1206-etched.step / vbe1206-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbe1206.step / vbe1206.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 8e61d34ca40dfda2, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF