component
VBE1106N
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBE1106N
VBsemi Elec · MOSFETs · TO-252
VBE1106N from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage limited to ±20 V, with VGS(th) of 1.0 to 3.5 V at ID = 250 μA. |
| 2 | D | passive | Drain terminal (also the tab); drain-source voltage rated 100 V, continuous drain current 25 A at TC = 25 °C, pulsed 75 A. |
| 3 | S | passive | Source terminal; continuous source-drain diode current 50 A at TC = 25 °C (package limit), body diode VSD 0.8 V typ at IS = 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 25 | A | TC = 25 °C, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 20 | A | TC = 70 °C, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 12 | A | TA = 25 °C, b, c | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA = 70 °C, b, c | 1 | ||
| Pulsed Drain Current | IDM | 75 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 50 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 6.9 | A | TA = 25 °C, b, c | 1 | ||
| Avalanche Current Pulse | IAS | 33 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 55 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 83 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 58 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 8.3 | W | TA = 25 °C, b, c | 1 | ||
| Maximum Power Dissipation | PD | 5.8 | W | TA = 70 °C, b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 15 | 18 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 1.5 | 1.8 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 25 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.055 | Ω | VGS = 10 V, ID = 12 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.057 | Ω | VGS = 4.5 V, ID = 8 A | 2 | ||
| Total Gate Charge | Qg | 21 | 32 | nC | 2 | ||
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 15 | 25 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 50 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 40 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 10 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 50 | 75 | ns | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 100 | 150 | nC | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 165 | mV/°C | ID = 250 μA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -11 | mV/°C | ID = 250 μA | 2 | ||
| Forward Transconductance | gfs | 25 | S | VDS = 15 V, ID = 12 A | 2 | ||
| Input Capacitance | Ciss | 1800 | pF | VDS = 12 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VDS = 12 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 60 | pF | VDS = 12 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate Resistance | Rg | 1.5 | Ω | f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDS = 50 V, VGS = 10 V, ID = 12 A | 2 | ||
| Gate-Drain Charge | Qgd | 9 | nC | VDS = 50 V, VGS = 10 V, ID = 12 A | 2 |
CAD (KiCad official)
- Symbol:
VBE1106N - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vbe1106n-etched.step/vbe1106n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbe1106n.step/vbe1106n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
92f75f6f155c4fd4, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).