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VBE1105

Public Made by Adom

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBE1105

VBsemi Elec · MOSFETs · TO-252

VBE1105 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V with a gate threshold of 2 to 4 V at ID = 250 µA.
2 D passive Drain (also the exposed tab, junction-to-case RthJC 0.4 °C/W); drain-source voltage rating is 100 V.
3 S passive Source; rDS(on) is 0.005 Ω at VGS = 10 V, ID = 30 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Single Pulse Avalanche Energy EAS 60 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 155 W TC = 25 °C 1
Maximum Power Dissipation PD 3.35 W TA = 25 °C, mounted on 1" square PCB 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient RthJA 40 °C/W PCB Mount (TO-263), 1" square PCB 1
Junction-to-Case (Drain) RthJC 0.4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 100 A VDS ≥ 5 V, VGS = 10 V 2
Total Gate Charge Qg 90 130 nC VDS = 100 V, VGS = 10 V, ID = 58 A 2
Gate Resistance Rg 0.5 1.3 3.1 Ω 2
Turn-On Delay Time td(on) 24 35 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 220 330 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 200 300 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Forward Voltage VSD 1 1.5 V IF = 58 A, VGS = 0 V 2
Reverse Recovery Time trr 130 200 ns IF = 30 A, di/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.52 1.2 µC IF = 30 A, di/dt = 100 A/µs 2
Input Capacitance Ciss 2800 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 410 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 210 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 23 nC VDS = 100 V, VGS = 10 V, ID = 58 A 2
Gate-Drain Charge Qgd 34 nC VDS = 100 V, VGS = 10 V, ID = 58 A 2

CAD (KiCad official)

  • Symbol: VBE1105
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: vbe1105-etched.step / vbe1105-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbe1105.step / vbe1105.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 55153d1a86fb2f82, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF