VBC6N2022 from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	D	passive	Drain, common drain of the dual N-channel MOSFET (VDS rated 25 V), connected to pin 8.
2	S1	passive	Source of MOSFET 1.
3	S1	passive	Source of MOSFET 1.
4	G1	input	Gate of MOSFET 1, rated to ±12 V gate-source voltage.
5	G2	input	Gate of MOSFET 2, rated to ±12 V gate-source voltage.
6	S2	passive	Source of MOSFET 2.
7	S2	passive	Source of MOSFET 2.
8	D	passive	Drain, common drain of the dual N-channel MOSFET (VDS rated 25 V), connected to pin 1.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TSSOP-8
Category	Transistors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate Threshold Voltage	VGS(th)	0.5	1		V	VDS = VGS, ID = 250 µA	2
Gate-Body Leakage	IGSS	-200		200	nA	VDS = 0 V, VGS = ±4.5 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 25 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (TJ = 70 °C)	IDSS			25	µA	VDS = 25 V, VGS = 0 V, TJ = 70 °C	2
On-State Drain Current	ID(on)	30			A	VDS ≤ 5 V, VGS = 4.5 V	2
Diode Forward Voltage	VSD		0.71	1.2	V	IS = 1.5 A, VGS = 0 V	2
Total Gate Charge	Qg		12	18	nC	VDS = 10 V, VGS = 4.5 V, ID = 6.5 A	2
Turn-On Delay Time	td(on)		245	365	ns	VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω	2
Rise Time	tr		330	495	ns	VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω	2
Turn-Off Delay Time	td(off)		860	1300	ns	VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω	2
Fall Time	tf		510	765	ns	VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω	2
Drain-Source Voltage	VDS			25	V		1
Gate-Source Voltage	VGS	-12		12	V		1
Continuous Drain Current	ID			6.6	A	TA = 25 °C, t ≤ 10 s; TJ = 150 °C	1
Continuous Drain Current	ID			5.2	A	TA = 25 °C, steady state; TJ = 150 °C	1
Continuous Drain Current	ID			5.5	A	TA = 70 °C, t ≤ 10 s; TJ = 150 °C	1
Continuous Drain Current	ID			3.5	A	TA = 70 °C, steady state; TJ = 150 °C	1
Pulsed Drain Current	IDM			30	A		1
Continuous Source Current (Diode Conduction)	IS			1.5	A	TA = 25 °C, t ≤ 10 s	1
Continuous Source Current (Diode Conduction)	IS			1	A	TA = 25 °C, steady state	1
Maximum Power Dissipation	PD			1.5	W	TA = 25 °C, t ≤ 10 s	1
Maximum Power Dissipation	PD			1	W	TA = 25 °C, steady state	1
Maximum Power Dissipation	PD			0.96	W	TA = 70 °C, t ≤ 10 s	1
Maximum Power Dissipation	PD			0.64	W	TA = 70 °C, steady state	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		72	83	°C/W	Surface mounted on FR4 board, t ≤ 10 s	1
Maximum Junction-to-Ambient	RthJA		100	120	°C/W	Steady state	1
Maximum Junction-to-Foot (Drain)	RthJF		55	70	°C/W	Steady state	1

CAD (KiCad official)

Symbol: VBC6N2022
Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
3D model: TSSOP-8 (KiCad packages3D, STEP)
3D model files: vbc6n2022-etched.step / vbc6n2022-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbc6n2022.step / vbc6n2022.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 b139e97285c8a8bb, retrieved 2026-11-05, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

VBC6N2022

Verified VBC6N2022

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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