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VBA5638

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBA5638

VBsemi Elec · MOSFETs · SO-8

VBA5638 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive N-channel MOSFET source terminal; the N-channel device is rated VDS 60 V with gate-source voltage limited to ±20 V.
2 G1 input N-channel MOSFET gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings.
3 S2 passive P-channel MOSFET source terminal; the P-channel device is rated VDS -60 V with gate-source voltage limited to ±20 V.
4 G2 input P-channel MOSFET gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings.
5 D2 passive P-channel MOSFET drain terminal; the P-channel continuous drain current is rated -4.9 A at VGS = -10 V (TA = 25 °C, product summary).
6 D2 passive P-channel MOSFET drain terminal (second drain lead of the P-channel device, internally common with pin 5); rated VDS -60 V.
7 D1 passive N-channel MOSFET drain terminal (second drain lead of the N-channel device, internally common with pin 8); rated VDS 60 V.
8 D1 passive N-channel MOSFET drain terminal; the N-channel continuous drain current is rated 5.3 A at VGS = 10 V (TC = 25 °C, product summary).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 60 V N-Channel 1
Drain-Source Voltage (P-Channel) VDS -60 V P-Channel 1
Gate-Source Voltage VGS -20 20 V Printed ±20 V; N- and P-Channel 1
Continuous Drain Current TC=25 °C (N-Channel) ID 5.3 A N-Channel; TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current TC=70 °C (N-Channel) ID 4.3 A N-Channel; TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current TA=25 °C (N-Channel) ID 4.3 A N-Channel; TA = 25 °C (footnotes b, c) 1
Continuous Drain Current TA=70 °C (N-Channel) ID 3.4 A N-Channel; TA = 70 °C (footnotes b, c) 1
Continuous Drain Current TC=25 °C (P-Channel) ID -4.9 A P-Channel; TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current TC=70 °C (P-Channel) ID -4.2 A P-Channel; TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current TA=25 °C (P-Channel) ID -4 A P-Channel; TA = 25 °C (footnotes b, c) 1
Continuous Drain Current TA=70 °C (P-Channel) ID -3.4 A P-Channel; TA = 70 °C (footnotes b, c) 1
Pulsed Drain Current (N-Channel) IDM 20 A N-Channel; 10 µs pulse width 1
Pulsed Drain Current (P-Channel) IDM -25 A P-Channel; 10 µs pulse width 1
Source Drain Current Diode Current TC=25 °C (N-Channel) IS 2.6 A N-Channel; TC = 25 °C 1
Source Drain Current Diode Current TC=25 °C (P-Channel) IS -2.8 A P-Channel; TC = 25 °C 1
Source Drain Current Diode Current TA=25 °C (N-Channel) IS 1.7 A N-Channel; TA = 25 °C (footnotes b, c) 1
Source Drain Current Diode Current TA=25 °C (P-Channel) IS -1.7 A P-Channel; TA = 25 °C (footnotes b, c) 1
Pulsed Source-Drain Current (N-Channel) ISM 20 A N-Channel 1
Pulsed Source-Drain Current (P-Channel) ISM -25 A P-Channel 1
Single Pulse Avalanche Current (N-Channel) IAS 11 A N-Channel; L = 0.1 mH 1
Single Pulse Avalanche Current (P-Channel) IAS 15 A P-Channel; L = 0.1 mH 1
Single Pulse Avalanche Energy (N-Channel) EAS 6.1 mJ N-Channel 1
Single Pulse Avalanche Energy (P-Channel) EAS 11 mJ P-Channel 1
Maximum Power Dissipation TC=25 °C (N-Channel) PD 3.1 W N-Channel; TC = 25 °C 1
Maximum Power Dissipation TC=25 °C (P-Channel) PD 3.4 W P-Channel; TC = 25 °C 1
Maximum Power Dissipation TA=25 °C (N-Channel) PD 2 W N-Channel; TA = 25 °C (footnotes b, c) 1
Maximum Power Dissipation TA=25 °C (P-Channel) PD 2 W P-Channel; TA = 25 °C (footnotes b, c) 1
Maximum Power Dissipation TA=70 °C (N-Channel) PD 1.3 W N-Channel; TA = 70 °C (footnotes b, c) 1
Maximum Power Dissipation TA=70 °C (P-Channel) PD 1.3 W P-Channel; TA = 70 °C (footnotes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient t≤10 s (N-Channel) RthJA 55 62.5 °C/W N-Channel; t ≤ 10 s 1
Maximum Junction-to-Ambient t≤10 s (P-Channel) RthJA 53 62.5 °C/W P-Channel; t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) Steady State (N-Channel) RthJF 33 40 °C/W N-Channel; steady state 1
Maximum Junction-to-Foot (Drain) Steady State (P-Channel) RthJF 30 37 °C/W P-Channel; steady state 1
Maximum Junction-to-Ambient Steady State (note d) RthJA 110 °C/W N- and P-Channel; steady state (note d) 1
Drain-Source Breakdown Voltage (N-Channel) VDS 60 V VGS = 0 V, ID = 250 µA, N-Ch 2
Drain-Source Breakdown Voltage (P-Channel) VDS -60 V VGS = 0 V, ID = -250 µA, P-Ch 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 3 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate Threshold Voltage (P-Channel) VGS(th) -1 -3 V VDS = VGS, ID = -250 µA, P-Ch 2
Gate-Body Leakage (N-Channel) IGSS 100 nA VDS = 0 V, VGS = ±20 V, N-Ch 2
Gate-Body Leakage (P-Channel) IGSS -100 nA VDS = 0 V, VGS = ±20 V, P-Ch 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 60 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -60 V, VGS = 0 V, P-Ch 2
Zero Gate Voltage Drain Current TJ=55 °C (N-Channel) IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C, N-Ch 2
Zero Gate Voltage Drain Current TJ=55 °C (P-Channel) IDSS -10 µA VDS = -60 V, VGS = 0 V, TJ = 55 °C, P-Ch 2
On-State Drain Current (N-Channel) ID(on) 20 A VDS ≥ 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current (P-Channel) ID(on) -25 A VDS ≤ -5 V, VGS = -10 V, P-Ch 2
Total Gate Charge (N-Channel) Qg 13 20 nC VDS = 30 V, VGS = 10 V, ID = 4.3 A, N-Ch 2
Total Gate Charge (P-Channel) Qg 14.5 22 nC VDS = -30 V, VGS = -10 V, ID = -3.1 A, P-Ch 2
Total Gate Charge VGS=4.5 V (N-Channel) Qg 6 9 nC VDS = 30 V, VGS = 4.5 V, ID = 4.3 A, N-Ch 2
Total Gate Charge VGS=-4.5 V (P-Channel) Qg 8 12 nC VDS = -30 V, VGS = -4.5 V, ID = -3.1 A, P-Ch 2
Gate Resistance (N-Channel) Rg 2 3 Ω f = 1 MHz, N-Ch 2
Gate Resistance (P-Channel) Rg 14 20 Ω f = 1 MHz, P-Ch 2
Turn-On Delay Time VGEN=4.5 V (N-Channel) td(on) 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch 3
Turn-On Delay Time VGEN=-4.5 V (P-Channel) td(on) 30 45 ns VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch 3
Rise Time VGEN=4.5 V (N-Channel) tr 65 100 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch 3
Rise Time VGEN=-4.5 V (P-Channel) tr 70 105 ns VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch 3
Diode Forward Voltage (N-Channel) VSD 0.8 1.2 V IS = 1.7 A, N-Ch 3
Diode Forward Voltage (P-Channel) VSD -0.8 -1.2 V IS = -2 A, P-Ch 3

CAD (KiCad official)

  • Symbol: VBA5638
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba5638-etched.step / vba5638-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba5638.step / vba5638.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 ce11888dc432d040, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF