component
VBA5325
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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownVBA5325
VBsemi Elec · MOSFETs · SO-8
VBA5325 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30 V, 8 A package-limited, RDS(on) 0.018 ohm at VGS = 10 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30 V, -8 A package-limited, RDS(on) 0.040 ohm at VGS = -10 V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, rated -30 V with pulsed drain current of -40 A; internally common with pins 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, rated -30 V with pulsed drain current of -40 A; internally common with pins 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, rated 30 V with pulsed drain current of 40 A; internally common with pins 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, rated 30 V with pulsed drain current of 40 A; internally common with pins 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 8 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -8 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 6.8 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -6.6 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.4 | A | TA = 70 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -5.3 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 40 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -40 | A | 10 µs pulse width | 1 | ||
| Source-Drain Current Diode Current (N-Channel) | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Current Diode Current (P-Channel) | IS | -2.6 | A | TC = 25 °C | 1 | ||
| Pulsed Source-Drain Current (N-Channel) | ISM | 40 | A | 1 | |||
| Pulsed Source-Drain Current (P-Channel) | ISM | -40 | A | 1 | |||
| Single Pulse Avalanche Current (N-Channel) | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-Channel) | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | 1 | |||
| Maximum Power Dissipation (N-Channel) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 3.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 2 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 2 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-Channel) | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient (P-Channel) | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) (N-Channel) | RthJF | 30 | 40 | °C/W | steady state | 1 | |
| Maximum Junction-to-Foot (Drain) (P-Channel) | RthJF | 29 | 38 | °C/W | steady state | 1 | |
| Maximum Junction-to-Ambient (N-Channel), steady state | RthJA | 120 | °C/W | steady state (note d) | 1 | ||
| Maximum Junction-to-Ambient (P-Channel), steady state | RthJA | 110 | °C/W | steady state (note d) | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -2 | V | VDS = VGS, ID = -250 µA | 2 | ||
| Gate-Body Leakage (N-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Gate-Body Leakage (P-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.018 | Ω | VGS = 10 V, ID = 6.8 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 | ||
| Total Gate Charge (N-Channel) | Qg | 6 | 10 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 41.5 | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A | 2 | |
| Gate Resistance (N-Channel) | Rg | 0.3 | 1.1 | 2.3 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage (N-Channel) | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body Diode Voltage (P-Channel) | VSD | -0.77 | -1.2 | V | IS = -2 A | 3 | |
| Body Diode Reverse Recovery Time (N-Channel) | trr | 12 | 25 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time (P-Channel) | trr | 31 | 57 | ns | IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge (N-Channel) | Qrr | 10 | 17 | nC | 3 | ||
| Body Diode Reverse Recovery Charge (P-Channel) | Qrr | 29 | 47 | nC | 3 | ||
| Turn-On Delay Time (N-Channel) | td(on) | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (P-Channel) | td(on) | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (N-Channel) | td(off) | 16 | 22 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (P-Channel) | td(off) | 23 | 26 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
CAD (KiCad official)
- Symbol:
VBA5325 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
vba5325-etched.step/vba5325-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vba5325.step/vba5325.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
68ae6d6bc10f7c40, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).