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VBA3860

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsvba3860
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs vba3860: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
viewers vba3860: viewers · Ray 26d ago
package.json Publish 0.1.0 · Ray 26d ago
page.json Brief states the pinout check that actually ran (was an unconditional "Datasheet-verified pinout") · Ray 10d ago
README.md vba3860: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray 14d ago
vba3860-etched.fit.json vba3860: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
vba3860-etched.glb vba3860: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
vba3860-etched.step vba3860: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
vba3860.glb Publish 0.1.0 · Ray 26d ago
vba3860.kicad_mod Publish 0.1.0 · Ray 26d ago
vba3860.kicad_sym Publish 0.1.0 · Ray 26d ago
vba3860.lbr Publish 0.1.0 · Ray 26d ago
vba3860.step Publish 0.1.0 · Ray 26d ago

VBA3860

VBsemi Elec · MOSFETs · SO-8

VBA3860 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (Q1). Body-diode anode. Rated ID = 3.5 A continuous at TA=25°C; body-diode continuous current IS = 2.5 A max.
2 G1 input Gate of MOSFET 1 (Q1). VGS rated ±30 V max; VGS(th) = 3.5-5 V; typical gate resistance Rg = 1.8 Ω, Qg(10V) = 11 nC typ.
3 S2 passive Source of MOSFET 2 (Q2). Body-diode anode. Rated ID = 3.5 A continuous at TA=25°C; body-diode continuous current IS = 2.5 A max.
4 G2 input Gate of MOSFET 2 (Q2). VGS rated ±30 V max; VGS(th) = 3.5-5 V; typical gate resistance Rg = 1.8 Ω, Qg(10V) = 11 nC typ.
5 D2 passive Drain of MOSFET 2 (Q2). Body-diode cathode. VDS rated 80 V max; pin ganged with pin 6 for current handling.
6 D2 passive Drain of MOSFET 2 (Q2). Body-diode cathode. VDS rated 80 V max; pin ganged with pin 5 for current handling.
7 D1 passive Drain of MOSFET 1 (Q1). Body-diode cathode. VDS rated 80 V max; pin ganged with pin 8 for current handling.
8 D1 passive Drain of MOSFET 1 (Q1). Body-diode cathode. VDS rated 80 V max; pin ganged with pin 7 for current handling.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

CAD (KiCad official)

  • Symbol: VBA3860
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba3860-etched.step / vba3860-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba3860.step / vba3860.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 aee866f1fd2d04f0, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF