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VBA2625

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBA2625

VBsemi Elec · MOSFETs · SO-8

VBA2625 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the datasheet rates the continuous source-drain diode current IS at -9 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; the datasheet rates the continuous source-drain diode current IS at -9 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; the datasheet rates the continuous source-drain diode current IS at -9 A at TC = 25 °C.
4 G input Gate terminal; the datasheet limits gate-source voltage VGS to ±20 V and gate threshold VGS(th) to -1 V to -3 V at ID = -250 µA.
5 D passive Drain terminal; the datasheet rates drain-source voltage VDS at -60 V and continuous drain current ID at -10 A at TC = 25 °C.
6 D passive Drain terminal; the datasheet rates drain-source voltage VDS at -60 V and continuous drain current ID at -10 A at TC = 25 °C.
7 D passive Drain terminal; the datasheet rates drain-source voltage VDS at -60 V and continuous drain current ID at -10 A at TC = 25 °C.
8 D passive Drain terminal; the datasheet rates drain-source voltage VDS at -60 V and continuous drain current ID at -10 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -10 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -9 A TC = 70 °C 1
Continuous Drain Current ID 8 A TA = 25 °C (footnote b) 1
Continuous Drain Current ID -8 A TA = 70 °C (footnote b) 1
Pulsed Drain Current IDM -50 A 1
Avalanche Current Pulse IAS -45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C (footnote b) 1
Maximum Power Dissipation PD 104.2 W TC = 25 °C 1
Maximum Power Dissipation PD 66.7 W TC = 70 °C 1
Maximum Power Dissipation PD 3.1 W TA = 25 °C (footnote b) 1
Maximum Power Dissipation PD 2 W TA = 70 °C (footnote b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (steady state) RthJA 33 40 °C/W Steady state; surface mounted on 1in x 1in FR4 board (footnote b) 1
Maximum Junction-to-Case (steady state) RthJC 0.98 1.2 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -12 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.025 Ω VGS = -10 V, ID = -5 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = -4.5 V, ID = -5 A 2
Total Gate Charge Qg 76 115 nC VDS = -30 V, VGS = -10 V, ID = -55 A 2
Total Gate Charge Qg 38 60 nC VDS = -30 V, VGS = -4.5 V, ID = -55 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -9 A TC = 25 °C 2
Body Diode Voltage VSD -1 -1.5 V IS = -30 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: VBA2625
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba2625-etched.step / vba2625-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba2625.step / vba2625.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 bfdf0a6fe15123e7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF