component
VBA2420
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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VBA2420
VBsemi Elec · MOSFETs · SO-8
VBA2420 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; body diode continuous source-drain current is -18 A at TC = 25 °C. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode continuous source-drain current is -18 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode continuous source-drain current is -18 A at TC = 25 °C. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20 V, threshold -1 to -2.5 V at ID = -250 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | -8 | A | TJ = 150 °C, TC = 25 °C (package limited) | 1 | ||
| Continuous Drain Current | ID | -7 | A | TJ = 150 °C, TC = 70 °C (package limited) | 1 | ||
| Continuous Drain Current | ID | -7.7 | A | TJ = 150 °C, TA = 25 °C, notes a, b | 1 | ||
| Pulsed Drain Current | IDM | -32 | A | t = 300 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | -18 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -3 | A | TA = 25 °C, notes a, b | 1 | ||
| Avalanche Current | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 20 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 52 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 33 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.7 | W | TA = 25 °C, notes a, b | 1 | ||
| Maximum Power Dissipation | PD | 2.4 | W | TA = 70 °C, notes a, b | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | notes e, f | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 26 | 33 | °C/W | t ≤ 10 s, notes a, c | 1 | |
| Maximum Junction-to-Case | RthJC | 1.9 | 2.4 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -40 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | -23 | mV/°C | ID = - 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | 4.6 | mV/°C | ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2.5 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = - 40 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS ≤ - 10 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0176 | Ω | VGS = - 10 V, ID = - 15 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0208 | Ω | VGS = - 4.5 V, ID = - 10 A | 2 | ||
| Forward Transconductance | gfs | 50 | S | VDS = - 10 V, ID = - 15 A | 2 | ||
| Input Capacitance | Ciss | 3280 | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 427 | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 382 | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 73 | 110 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | 2 | |
| Total Gate Charge | Qg | 35.4 | 53 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 | |
| Gate-Source Charge | Qgs | 10.6 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 | ||
| Gate-Drain Charge | Qgd | 11.6 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 | ||
| Gate Resistance | Rg | 0.4 | 1.6 | 3.2 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 11 | 22 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 22 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 90 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 8 | 16 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 55 | 100 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 82 | 150 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 80 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 13 | 26 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -18 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -70 | A | TC = 25 °C | 2 | ||
| Body Diode Voltage | VSD | -0.74 | -1.2 | V | IS = - 3 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 18 | 36 | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 8 | 16 | nC | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Reverse Recovery Fall Time | ta | 7 | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Reverse Recovery Rise Time | tb | 11 | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
VBA2420 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
vba2420-etched.step/vba2420-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vba2420.step/vba2420.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
ead64b50134bb9d7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VBA2420
**VBsemi Elec** · MOSFETs · SO-8
VBA2420 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; body diode continuous source-drain current is -18 A at TC = 25 °C. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode continuous source-drain current is -18 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode continuous source-drain current is -18 A at TC = 25 °C. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20 V, threshold -1 to -2.5 V at ID = -250 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS rated -40 V, RDS(on) 0.0176 Ω max at VGS = -10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -40 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | -8 | A | TJ = 150 °C, TC = 25 °C (package limited) | 1 |
| Continuous Drain Current | ID | | | -7 | A | TJ = 150 °C, TC = 70 °C (package limited) | 1 |
| Continuous Drain Current | ID | | | -7.7 | A | TJ = 150 °C, TA = 25 °C, notes a, b | 1 |
| Pulsed Drain Current | IDM | | | -32 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS | | | -18 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | -3 | A | TA = 25 °C, notes a, b | 1 |
| Avalanche Current | IAS | | | -20 | A | L = 0.1 mH | 1 |
| Single-Pulse Avalanche Energy | EAS | | | 20 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 52 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 33 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.7 | W | TA = 25 °C, notes a, b | 1 |
| Maximum Power Dissipation | PD | | | 2.4 | W | TA = 70 °C, notes a, b | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 260 | °C | notes e, f | 1 |
| Maximum Junction-to-Ambient | RthJA | | 26 | 33 | °C/W | t ≤ 10 s, notes a, c | 1 |
| Maximum Junction-to-Case | RthJC | | 1.9 | 2.4 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | -40 | | | V | VGS = 0 V, ID = - 250 µA | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | -23 | | mV/°C | ID = - 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | | 4.6 | | mV/°C | ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -2.5 | | -1 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = - 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VDS = - 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -30 | | | A | VDS ≤ - 10 V, VGS = - 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.0176 | Ω | VGS = - 10 V, ID = - 15 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.0208 | Ω | VGS = - 4.5 V, ID = - 10 A | 2 |
| Forward Transconductance | gfs | | 50 | | S | VDS = - 10 V, ID = - 15 A | 2 |
| Input Capacitance | Ciss | | 3280 | | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 427 | | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 382 | | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 73 | 110 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | 2 |
| Total Gate Charge | Qg | | 35.4 | 53 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 |
| Gate-Source Charge | Qgs | | 10.6 | | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 |
| Gate-Drain Charge | Qgd | | 11.6 | | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 |
| Gate Resistance | Rg | 0.4 | 1.6 | 3.2 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 11 | 22 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 11 | 22 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 45 | 90 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 8 | 16 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 55 | 100 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 82 | 150 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 40 | 80 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 13 | 26 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | -18 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | -70 | A | TC = 25 °C | 2 |
| Body Diode Voltage | VSD | | -0.74 | -1.2 | V | IS = - 3 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 18 | 36 | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 8 | 16 | nC | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Fall Time | ta | | 7 | | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Rise Time | tb | | 11 | | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
## CAD (KiCad official)
- Symbol: `VBA2420`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `vba2420-etched.step` / `vba2420-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vba2420.step` / `vba2420.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/vba2420-datasheet.pdf) (9 pp, sha256 `ead64b50134bb9d7`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vba2420-datasheet.pdf)