component
VBA2202K
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBA2202K
VBsemi Elec · MOSFETs · SOP-8
VBA2202K from VBsemi Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is limited to -3.5 A. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is limited to -3.5 A. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is limited to -3.5 A. |
| 4 | G | input | Gate terminal; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 5 | D | passive | Drain terminal; drain-source voltage is limited to -200 V with continuous drain current ID of -3.6 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal; drain-source voltage is limited to -200 V with continuous drain current ID of -3.6 A at TC = 25 °C. |
| 7 | D | passive | Drain terminal; drain-source voltage is limited to -200 V with continuous drain current ID of -3.6 A at TC = 25 °C. |
| 8 | D | passive | Drain terminal; drain-source voltage is limited to -200 V with continuous drain current ID of -3.6 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -3.6 | A | TC = 25 °C, VGS at -10 V | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | TC = 100 °C, VGS at -10 V | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | 1 | |||
| Linear Derating Factor | 0.59 | W/°C | 1 | ||||
| Linear Derating Factor (PCB mount) | 0.025 | W/°C | PCB mount | 1 | |||
| Single Pulse Avalanche Energy | EAS | 500 | mJ | 1 | |||
| Avalanche Current | IAR | -6.4 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 7.4 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 74 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB mount) | PD | 3 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s | 1 | |||
| Maximum Junction-to-Ambient | RthJA | -62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB mount) | RthJA | -40 | °C/W | PCB mount | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | -1.7 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | -200 | V | VGS = 0, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = -200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 2.8 | S | VDS = -50 V, ID = -1.0 A | 2 | ||
| Total Gate Charge | Qg | 29 | nC | ID = -3.5 A, VDS = -160 V, VGS = -10 V | 2 | ||
| Gate-Source Charge | Qgs | 5.4 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 15 | nC | 2 | |||
| Gate Input Resistance | Rg | 0.6 | 3.7 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous Source-Drain Diode Current | IS | -3.5 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -6 | A | 2 | |||
| Body Diode Voltage | VSD | -6.5 | V | TJ = 25 °C, IS = -3.5 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 200 | 300 | ns | TJ = 25 °C, IF = -3.5 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | -1.9 | 2.9 | μC | 2 |
CAD (KiCad official)
- Symbol:
VBA2202K - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
vba2202k-etched.step/vba2202k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vba2202k.step/vba2202k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
ec7a2de18139fed4, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).