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VBA2102M

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBA2102M

VBsemi Elec · MOSFETs · SO-8

VBA2102M from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the datasheet gives no separate pin limit for this terminal.
2 S passive Source terminal of the P-channel MOSFET; the datasheet gives no separate pin limit for this terminal.
3 S passive Source terminal of the P-channel MOSFET; the datasheet gives no separate pin limit for this terminal.
4 G input Gate terminal; the gate-source voltage is rated at ±20 V (VGS).
5 D passive Drain terminal; the drain-source voltage is rated at -100 V (VDS).
6 D passive Drain terminal; the drain-source voltage is rated at -100 V (VDS).
7 D passive Drain terminal; the drain-source voltage is rated at -100 V (VDS).
8 D passive Drain terminal; the drain-source voltage is rated at -100 V (VDS).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -100 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -8 A VDS ≤ - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.16 Ω VGS = - 10 V, ID = - 2 A 2
Drain-Source On-State Resistance RDS(on) 0.2 Ω VGS = - 4.5 V, ID = - 1.5 A 2
Total Gate Charge Qg 27.5 42 nC VDS = - 50 V, VGS = - 10 V, ID = - 2 A 2
Total Gate Charge Qg 23.2 35 nC VDS = - 50 V, VGS = - 6 V, ID = - 2 A 2
Gate Resistance Rg 6.1 9.2 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 20 30 ns VDD = - 75 V, RL = 25, ID - 3 A, VGEN = - 6 V, Rg = 1 2
Rise Time tr 95 145 ns VDD = - 75 V, RL = 25, ID - 3 A, VGEN = - 6 V, Rg = 1 2
Turn-Off Delay Time td(off) 38 60 ns VDD = - 75 V, RL = 25, ID - 3 A, VGEN = - 6 V, Rg = 1 2
Fall Time tf 34 51 ns VDD = - 75 V, RL = 25, ID - 3 A, VGEN = - 6 V, Rg = 1 2
Turn-On Delay Time td(on) 11 18 ns VDD = - 75 V, RL = 25, ID - 2 A, VGEN = - 10 V, Rg = 1 2
Rise Time tr 28 42 ns VDD = - 75 V, RL = 25, ID - 2 A, VGEN = - 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 52 78 ns VDD = - 75 V, RL = 25, ID - 2 A, VGEN = - 10 V, Rg = 1 2
Fall Time tf 35 53 ns VDD = - 75 V, RL = 25, ID - 2 A, VGEN = - 10 V, Rg = 1 2
Continuous Source-Drain Diode Current IS -13 A TC = 25 °C 2
Pulse Diode Forward Current ISM -15 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = - 2 A 2
Body Diode Reverse Recovery Time trr 65 90 ns IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 180 270 nC IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS -100 V TA = 25 °C, unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -2.5 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -2.3 A TC = 70 °C 1
Continuous Drain Current ID -2 A TA = 25 °C 1
Continuous Drain Current ID -1.6 A TA = 70 °C 1
Pulsed Drain Current IDM -15 A 1
Avalanche Current IAS -15 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 11.25 mJ 1
Maximum Power Dissipation PD 5.9 W TC = 25 °C 1
Maximum Power Dissipation PD 3.8 W TC = 70 °C 1
Maximum Power Dissipation PD 3.1 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 33 40 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 80 °C/W Steady state conditions (note b) 1
Maximum Junction-to-Foot (Drain) RthJF 17 21 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: VBA2102M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba2102m-etched.step / vba2102m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba2102m.step / vba2102m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 e9dd30cf34124420, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF