component

VBA1104N

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsvba1104nfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
vba1104n / README.md
History Download
Ray Publish 0.1.0 44118ff 5h ago

VBA1104N

VBsemi Elec · MOSFETs · SO-8

VBA1104N from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, with the body diode source-drain current rated 7.7 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET, with the body diode source-drain current rated 7.7 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET, with the body diode source-drain current rated 7.7 A at TC = 25 °C.
4 G input Gate terminal of the MOSFET; gate-source voltage is rated ±20 V per the absolute maximum ratings.
5 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.
6 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.
7 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.
8 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 6 A TC = 70 °C 1
Continuous Drain Current ID 5 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 40 A 1
Continuous Source-Drain Diode Current IS 7 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 3.8 A TA = 25 °C (notes b, c) 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 112 mJ 1
Maximum Power Dissipation PD 14 W TC = 25 °C 1
Maximum Power Dissipation PD 5 W TC = 70 °C 1
Maximum Power Dissipation PD 4 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 2 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 33 40 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) RthJF 17 21 °C/W Steady State 1
Maximum Junction-to-Ambient RthJA 80 °C/W Steady state conditions (note d) 1
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 10 V, VGS = 10 V 2
Total Gate Charge Qg 28.5 43 nC VDS = 75 V, VGS = 10 V, ID = 5 A 2
Total Gate Charge Qg 23 35 nC VDS = 75 V, VGS = 8 V, ID = 5 A 2
Gate Resistance Rg 0.8 1.3 Ω f = 1 MHz 2
Turn-on Delay Time td(on) 14 21 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 12 18 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 22 33 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 6 10 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 16 24 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 2
Fall Time tf 7 12 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.77 1.2 V IS = 2.6 A 2
Body Diode Reverse Recovery Time trr 63 95 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 110 165 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Continuous Source-Drain Diode Current IS 7.7 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Input Capacitance Ciss 1900 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 150 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Forward Transconductance gfs 20 S VDS = 15 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 32 mΩ VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 33 mΩ VGS = 4.5 V, ID = 5 A 2
VDS Temperature Coefficient ΔVDS/TJ 172 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -10 mV/°C 2
Gate-Source Charge Qgs 8 nC 2
Gate-Drain Charge Qgd 6.5 nC 2
Reverse Recovery Fall Time ta 49 ns 2
Reverse Recovery Rise Time tb 14 ns 2

CAD (KiCad official)

  • Symbol: VBA1104N
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba1104n-etched.step / vba1104n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba1104n.step / vba1104n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 c4d05a2d62dd0d43, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF