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VB3420

Public Made by Adom

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VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VB3420

VBsemi Elec · MOSFETs · TSOP-6

VB3420 from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of N-channel MOSFET 1, with gate-source voltage limited to ±20 V.
2 S2 passive Source of N-channel MOSFET 2 as labeled on the top-view package drawing.
3 G2 input Gate of N-channel MOSFET 2, with gate-source voltage limited to ±20 V.
4 D2 passive Drain of N-channel MOSFET 2, with drain-source voltage rated to 40 V.
5 S1 passive Source of N-channel MOSFET 1 as labeled on the top-view package drawing.
6 D1 passive Drain of N-channel MOSFET 1, with drain-source voltage rated to 40 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TA = 25 °C, unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C, unless otherwise noted 1
Continuous Drain Current ID 3.6 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID 2.5 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID 3 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID 2 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 20 A 10 µs pulse width 1
Source-Drain Current (Diode Current) IS 2 A TC = 25 °C 1
Source-Drain Current (Diode Current) IS 1.4 A TA = 25 °C (notes b, c) 1
Pulsed Source-Drain Current ISM 20 A 1
Single Pulse Avalanche Current IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 5 1
Maximum Power Dissipation PD 1.3 W TC = 25 °C 1
Maximum Power Dissipation PD 0.9 W TC = 70 °C 1
Maximum Power Dissipation PD 1 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.75 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 49 62.5 °C/W t 10 s (notes b, d) 1
Maximum Junction-to-Ambient, steady state (from note d) RthJA 120 °C/W steady state (note d) 1
Maximum Junction-to-Foot (Drain), steady state RthJF 30 40 °C/W steady state 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.058 Ω VGS = 10 V, ID = 7.0 A 2
Drain-Source On-State Resistance RDS(on) 0.072 Ω VGS = 4.5 V, ID = 6.0 A 2
Gate Resistance Rg 0.6 2.7 5.4 Ω f = 1 MHz 2
Turn-Off Delay Time td(off) 16 32 ns VDD = 20 V, RL = 2, ID = 7.0 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 8 16 ns VDD = 20 V, RL = 2, ID = 7.0 A, VGEN = 10 V, Rg = 1 2
Turn-On Delay Time td(on) 12 24 ns VDD = 20 V, RL = 2, ID = 7.0 A, VGEN = 4.5 V, Rg = 1 2
Rise Time tr 10 20 ns VDD = 20 V, RL = 2, ID = 7.0 A, VGEN = 4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 13 26 ns VDD = 20 V, RL = 2, ID = 7.0 A, VGEN = 4.5 V, Rg = 1 2
Continuous Source-Drain Diode Current IS 2.6 A TC = 25 °C 2
Body Diode Voltage VSD 0.77 1.2 V IS = 3 A 2
Body Diode Reverse Recovery Time trr 15 30 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7.5 15 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient VDS/TJ 49 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 mV/°C 2
Forward Transconductance gfs 35 S VDS = 15 V, ID = 7.0 A 2
Input Capacitance Ciss 280 pF VDS = 20 V, VGS = 0 V, ID = 1 MHz (as printed) 2
Output Capacitance Coss 50 pF VDS = 20 V, VGS = 0 V, ID = 1 MHz (as printed) 2
Reverse Transfer Capacitance Crss 22 pF VDS = 20 V, VGS = 0 V, ID = 1 MHz (as printed) 2
Total Gate Charge Qg 9 nC VDS = 20 V, VGS = 10 V, ID = 7.0 A 2
Total Gate Charge Qg 4.5 nC VDS = 20 V, VGS = 4.5 V, ID = 7.0 A 2
Gate-Source Charge Qgs 1.5 nC 2
Gate-Drain Charge Qgd 1.5 nC 2

CAD (KiCad official)

  • Symbol: VB3420
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: vb3420-etched.step / vb3420-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb3420.step / vb3420.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 4faa3bdb9ab3e93e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF