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VB2658

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VB2658

VBsemi Elec · MOSFETs · SOT-23(TO-236)

VB2658 from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -1.0 to -2.5 V at ID = -250 µA.
2 S passive Source of the P-channel MOSFET; continuous drain current is -5.2 A at TC = 25 °C.
3 D passive Drain; drain-source voltage rated -60 V and pulsed drain current -21 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = -48 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 1.6 S VDS = -25 V, ID = -3.2 A 2
VDS Temperature Coefficient ΔVDS/TJ -0.06 V/°C Reference to 25 °C, ID = -1 mA 2
Total Gate Charge Qg -12 nC VGS = -10 V, ID = -4.7 A, VDS = -48 V 2
Gate-Source Charge Qgs -3.8 nC VGS = -10 V, ID = -4.7 A, VDS = -48 V 2
Gate-Drain Charge Qgd -5.1 nC VGS = -10 V, ID = -4.7 A, VDS = -48 V 2
Continuous Source-Drain Diode Current IS 5.2 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 21 A Repetitive rating, pulse width limited by max junction temperature (note a) 2
Body Diode Voltage VSD -5.5 V TJ = 25 °C, IS = -5.2 A, VGS = 0 V; pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Body Diode Reverse Recovery Time trr 80 160 ns TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 0.096 0.19 µC TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS -60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5.2 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -3.8 A VGS at -10 V, TC = 100 °C 1
Pulsed Drain Current IDM -21 A Repetitive rating, pulse width limited by max junction temperature (note a) 1
Single Pulse Avalanche Energy EAS 120 mJ Starting TJ = 25 °C, VDD = -25 V, L = 5.0 mH, RG = 25 Ω, IAS = -5.3 A (note b) 1
Repetitive Avalanche Current IAR -5.2 A 1
Repetitive Avalanche Energy EAR 2.7 mJ 1
Maximum Power Dissipation PD 27 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -4.5 V/ns ISD ≤ -6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C (note c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C 10 s, 1.6 mm from case (note d) 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) Thermal Resistance RthJC 5.5 °C/W 2

CAD (KiCad official)

  • Symbol: VB2658
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: vb2658-etched.step / vb2658-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb2658.step / vb2658.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 4127fce6e92e191b, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF