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VB2610N

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VB2610N

VBsemi Elec · MOSFETs · SOT-23(TO-236)

VB2610N from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for VGS ±20 V with a gate threshold of -1 V to -3 V at ID = -250 μA.
2 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -3.9 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET, rated for VDS -60 V and continuous drain current of -4.5 A at TC = 25 °C (pulsed -20 A).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (55 °C) IDSS -5 μA VDS = -60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.07 Ω VGS = -10 V, ID = -3.5 A 2
Drain-Source On-State Resistance RDS(on) 0.085 Ω VGS = -4.5 V, ID = -2.8 A 2
Total Gate Charge Qg 20 30 nC VDS = -30 V, VGS = -10 V, ID = -3.5 A 2
Total Gate Charge Qg 10.1 15.2 nC VDS = -30 V, VGS = -4.5 V, ID = -3.5 A 2
Gate Resistance Rg 1.8 9 18 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 6 12 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 35 53 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 16 24 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 40 60 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 28 42 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 31 47 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 15 23 ns VDD = -30 V, RL = 10.7 Ω, ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -3.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -20 A t = 100 μs 2
Body Diode Voltage VSD -0.85 -1.2 V IS = -2.8 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 32 48 ns IF = -2.8 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 45 68 nC IF = -2.8 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID -4.5 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -4 A TC = 70 °C, TJ = 150 °C 1
Continuous Drain Current ID -3.5 A TA = 25 °C, a, b 1
Continuous Drain Current ID -3 A TA = 70 °C, a, b 1
Pulsed Drain Current IDM -20 A t = 100 μs 1
Continuous Source-Drain Diode Current IS -3.9 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.1 A TA = 25 °C, a, b 1
Avalanche Current IAS -15 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 11.25 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 4.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2.7 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C, a, b 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C, a, b 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 100 130 °C/W t ≤ 5 s 1
Maximum junction-to-case (drain) RthJF 60 75 °C/W Steady state 1
VDS Temperature Coefficient ΔVDS/TJ -6.7 mV/°C ID = -250 μA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -4.3 mV/°C ID = -250 μA 2
Forward Transconductance gfs 11 S VDS = -30 V, ID = -3.5 A 2
Input Capacitance Ciss 832 pF VDS = -30 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 88 pF VDS = -30 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 63 pF VDS = -30 V, VGS = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: VB2610N
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: vb2610n-etched.step / vb2610n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb2610n.step / vb2610n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 0650c6e8d5a43d38, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF