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VB1330

Public Made by Adom

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VB1330

VBsemi Elec · MOSFETs · SOT-23(TO-236)

VB1330 from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is limited to ±20 V (absolute maximum rating).
2 S passive Source terminal; the continuous source-drain diode current IS is rated 1.4 A at TC = 25 °C, and the body diode forward voltage is 1.2 V maximum at IS = 2.7 A.
3 D passive Drain terminal; the drain-source voltage VDS is 30 V and the continuous drain current is 6.5 A at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 6.5 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 6 A TC = 70 °C 1
Continuous Drain Current ID 5.3 A TA = 25 °C 1
Continuous Drain Current ID 5 A TA = 70 °C 1
Pulsed Drain Current IDM 25 A 1
Continuous Source-Drain Diode Current IS 1.4 A TC = 25 °C 1
Maximum Power Dissipation PD 1.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TC = 70 °C 1
Maximum Power Dissipation PD 0.7 W TA = 70 °C (note b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C notes d, e 1
Maximum Junction-to-Ambient RthJA 90 115 °C/W t ≤ 5 s (notes b, d) 1
Maximum Junction-to-Ambient (steady state) RthJA 130 °C/W steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 60 75 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.7 2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 10 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 10 V, ID = 3.2 A 2
Drain-Source On-State Resistance RDS(on) 0.033 Ω VGS = 4.5 V, ID = 2.8 A 2
Total Gate Charge Qg 4.5 6.7 nC VDS = 15 V, VGS = 10 V, ID = 3.4 A 2
Total Gate Charge Qg 2.1 3.2 nC VDS = 15 V, VGS = 4.5 V, ID = 3.4 A 2
Gate Resistance Rg 0.8 4.4 8.8 Ω f = 1 MHz 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 12 20 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 50 75 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 12 20 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 22 35 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 5 10 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 12 20 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 10 15 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 5 10 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 1.4 A TC = 25 °C 2
Pulse Diode Forward Current ISM 15 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 2.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 10 20 ns IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC 2
VDS Temperature Coefficient ΔVDS/TJ 31 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5 mV/°C 2
Input Capacitance Ciss 335 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 45 pF 2
Reverse Transfer Capacitance Crss 17 pF 2
Gate-Source Charge Qgs 0.85 nC 2
Gate-Drain Charge Qgd 0.65 nC 2
Forward Transconductance gfs 11 S VDS = 15 V, ID = 4.8 A 2

CAD (KiCad official)

  • Symbol: VB1330
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: vb1330-etched.step / vb1330-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb1330.step / vb1330.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 4bc7f0b888c4533a, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF